CAJ | 학술논문

对垂直于沟道的二维电势分布函数提出了一种新的近似,给出了基于这种近似的杂质浓度呈高斯分布的非均匀掺杂全耗尽SOI-MOSFET的阈值电压解析模型.模型结果与MEDICI数值模拟结果符合得很好,表明了模型的准确性,这为实践中分析与控制非均匀掺杂的全耗尽SOI-MOSFET的阈值电压提供了一种新的途径.
대수직우구도적이유전세분포함수제출료일충신적근사,급출료기우저충근사적잡질농도정고사분포적비균균참잡전모진SOI-MOSFET적역치전압해석모형.모형결과여MEDICI수치모의결과부합득흔호,표명료모형적준학성,저위실천중분석여공제비균균참잡적전모진SOI-MOSFET적역치전압제공료일충신적도경.
A novel approximation of the two-dimensional (2D) potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted (FD) SOI devices in practice.