CAJ | 학술논문

采用X射线掠射法和轮廓法，测量了单晶Si基板上用磁控溅射法制备的NiTi形状记忆合金薄膜的残余应力，分析了其与薄膜厚度以及晶化处理温度等工艺条件的关系.结果表明：该薄膜中的残余应力主要来源于薄膜同基板材料的膨胀系数和晶格参数不匹配；薄膜厚度越大，残余应力越小；晶化处理温度对因热胀系数差异带来的热拉应力因马氏体相变而致的相变压应力均有不同程度的影响.
채용X사선략사법화륜곽법，측량료단정Si기판상용자공천사법제비적NiTi형상기억합금박막적잔여응력，분석료기여박막후도이급정화처리온도등공예조건적관계.결과표명：해박막중적잔여응력주요래원우박막동기판재료적팽창계수화정격삼수불필배；박막후도월대，잔여응력월소；정화처리온도대인열창계수차이대래적열랍응력인마씨체상변이치적상변압응력균유불동정도적영향.
Residual stress in NiTi shape memory alloy thin film was measured by X-ray glancing and contour method separately. The effect of annealing temperature and film thickness on residual stress was also analyzed. The derivative of the residual stress is mainly the dismatch of expansion coefficient and crystal parameters. The thicker the film is, the lower the residual stress is. And the influence of annealing temperature was also found to be caused by the expansion coefficient difference and martensitic transition.