CAJ | 학술논문

对使用MOCVD方法在蓝宝石衬底上生长的典型InGaN样品进行了光致发光(PL)、霍耳(Hall)及扫描电镜(SEM)测量．结果表明:适当的生长温度(750℃)提高了样品中In的含量和PL强度。当Ⅴ/Ⅲ族比率大约5000时，750℃生长的样品背景载流子浓度约为2.21×1018cm-3,In含量约为11.54%．其室温394nm的带边峰,半高宽约为116meV,束缚能约为32.4meV,可能与束缚激子发光相关．该样品禁带宽度随温度变化的温度系数α(dE/dT)约为0.56×10-3eV/K．较高温度(800℃和900℃)生长的样品In含量较低,PL强度较弱,且在样品表面析出了金属In滴．
대사용MOCVD방법재람보석츤저상생장적전형InGaN양품진행료광치발광(PL)、곽이(Hall)급소묘전경(SEM)측량．결과표명:괄당적생장온도(750℃)제고료양품중In적함량화PL강도。당Ⅴ/Ⅲ족비솔대약5000시，750℃생장적양품배경재류자농도약위2.21×1018cm-3,In함량약위11.54%．기실온394nm적대변봉,반고관약위116meV,속박능약위32.4meV,가능여속박격자발광상관．해양품금대관도수온도변화적온도계수α(dE/dT)약위0.56×10-3eV/K．교고온도(800℃화900℃)생장적양품In함량교저,PL강도교약,차재양품표면석출료금속In적．
InGaN films of various compositions grown by MOCVD using PL, Halland SEM techniques have been analysed. When the Ⅴ/Ⅲ ratio is equal to 5000, the temperature of 750℃ is suitable for the growth of InGaN samples. Under these specific conditions, the electron concentration is about 2.21×1018cm-3 and In content about 11.54%. The wavelength of the near band-gap edge peak is 394nm at 295K and its full width of half maximum (FWHM) is about 116meV. According to the relations between the wavelength and the intensity of the near-band-gap-edge peak，at the growth temperature of 750℃,it can be obtained the temperature coefficient α(dE/dT) of the InGaN sample is 0.56×10-3eV/K and the binding energy of the near-band-gap-edge peak is 32.4 meV.At higher growth temperatures (800℃ and 900℃) ，the In content and the PL intensity of InGaN sample will decrease. And the meatl particles of In can be observed on the surface of the sample.