CAJ | 학술논문

采用有机半导体材料铜酞化氰和肖特基形栅极静电感应三极管结构制作有机薄膜三极管并对其电气特性进行了测试评价.制作的肖特基栅极有机SIT与MOSFET相比导电沟道长大幅缩短，而且通过适当的梳状电极结构设计，获得了良好的动作特性.有机SIT的动作特性与栅极偏压和梳状栅极的结构有很强的关系.
채용유궤반도체재료동태화청화초특기형책겁정전감응삼겁관결구제작유궤박막삼겁관병대기전기특성진행료측시평개.제작적초특기책겁유궤SIT여MOSFET상비도전구도장대폭축단，이차통과괄당적소상전겁결구설계，획득료량호적동작특성.유궤SIT적동작특성여책겁편압화소상책겁적결구유흔강적관계.
Static induction transistors (SIT) are fabricated using copper-phthalocyanine(CuPc) evaporated films. From the experimental results, it is found that source-drain current can be controlled by the bias voltage applied to A1 gate electrode. The device characteristics depend on the gate bias voltage and structure of Al electrode, and it will be used for display device. Look towards new device characteristics which to choose hi-mobility organic semiconductors materials and to contrive structure of SIT.