CAJ | 학술논문

用射频磁控溅射工艺在室温扩镓硅衬底上沉积Ga2O3膜,然后在氨气气氛下氮化Ga2O3膜得到GaN微米带,用X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)、X射线光电子能谱(XPS)及光致发光谱(PL)对薄膜样品进行了结构、表面形貌、组分及发光特性分析.SEM图像显示直径约为100 nm～300 nm微米带随机分布在GaN薄膜表面.XRD、XPS及SAED分析表明GaN微米带呈六方闪锌矿多晶结构,择优沿[001]方向生长.P1显示了可能由量子限制效应引起的发光峰,其相对于报道的GaN晶体发光峰有显著蓝移.
용사빈자공천사공예재실온확가규츤저상침적Ga2O3막,연후재안기기분하담화Ga2O3막득도GaN미미대,용X사선연사(XRD)、소묘전경(SEM)、선구전자연사(SAED)、X사선광전자능보(XPS)급광치발광보(PL)대박막양품진행료결구、표면형모、조분급발광특성분석.SEM도상현시직경약위100 nm～300 nm미미대수궤분포재GaN박막표면.XRD、XPS급SAED분석표명GaN미미대정륙방섬자광다정결구,택우연[001]방향생장.P1현시료가능유양자한제효응인기적발광봉,기상대우보도적GaN정체발광봉유현저람이.
Hexagonal GaN micro-ribbons were synthesized through nitriding Ga2O3 films under flowing ammonia. Ga2O3 films were deposited on the Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), selected area electron diffraction (SAED); X-ray photo electronic spectrometer (XPS) and photoluminescence (PL) spectroscopy were used to characterize the structure, surface morphology, composition and optical property of the synthesized samples. SEM images show that GaN micro-ribbons with 100-300nm in diameter are randomly distributed on the uniform films. XRD, XPS and SAED analysis suggest the micro-ribbons are polycrystalline GaN with hexagonal structure and preferentially grow in the [001] direction. The PL spectrum has a remarkable blue shift compared with the reported values of bulk GaN, which might be ascribed to quantum confinement effects.