CAJ | 학술논문

利用显微光致发光技术,观测到了N含量为0.1%,0.22%,0.36%和0.62%的GaAsN合金的E0,E0+△0和E+能级的光致发光峰.共振喇曼散射谱进一步证实了这些发光峰来源于所研究材料的本征能级,而不是来源于GaAsN合金中的一些局域激子发射.随着N组分的增加,E0+△0和E+能级分别向低能和高能方向移动并在N组分为0.16%时发生交错.文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级,尽管光致发光谱通常没有用来观测这些能级位置.
이용현미광치발광기술,관측도료N함량위0.1%,0.22%,0.36%화0.62%적GaAsN합금적E0,E0+△0화E+능급적광치발광봉.공진나만산사보진일보증실료저사발광봉래원우소연구재료적본정능급,이불시래원우GaAsN합금중적일사국역격자발사.수착N조분적증가,E0+△0화E+능급분별향저능화고능방향이동병재N조분위0.16%시발생교착.문중제출료일충소량등전자참잡화현미광치발광보상결합적방법래직접관측반도체재료대변이상적약천능급,진관광치발광보통상몰유용래관측저사능급위치.
The transitions of E0, E0 +△0, and E+ in dilute GaAs1-x Nx alloys with x = 0.10% ,0.22% ,0.36% ,and0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E+ and E0 +△0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronicdoping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.