CAJ | 학술논문

掺铟氧化锡(ITO)是一种宽带隙透明导电半导体材料,广泛地应用于各种平板显示器和气敏元件等.该文利用碳热还原方法成功制备出铟掺氧化锡"之"字形掺铟氧化锡纳米线结构,借助X射线衍射分析仪、透射电子显微镜、场发射扫描电子显微镜以及能谱分析观测纳米线的结构形貌以及成分分析,提出了一种"之"字形结构可能的形成模型,并进一步研究了氧化铟锡在室温下的光致发光性能;光致发光光谱主要包含有5个发光峰,分别是紫光峰(400 nm)、蓝光峰(452 nm,470 nm)、青光峰(487 nm,497 nm).
참인양화석(ITO)시일충관대극투명도전반도체재료,엄범지응용우각충평판현시기화기민원건등.해문이용탄열환원방법성공제비출인참양화석"지"자형참인양화석납미선결구,차조X사선연사분석의、투사전자현미경、장발사소묘전자현미경이급능보분석관측납미선적결구형모이급성분분석,제출료일충"지"자형결구가능적형성모형,병진일보연구료양화인석재실온하적광치발광성능;광치발광광보주요포함유5개발광봉,분별시자광봉(400 nm)、람광봉(452 nm,470 nm)、청광봉(487 nm,497 nm).
Single crystalline In-doped SnO_2 zigzag-shaped nanostructures were synthesized successtully by a carbothemal reduction method with vapor-solid(VS)growth.The structures,morphologies,and comDositions of the calcined products have been characterized by powder X-ray diffraction(XRD),transmission electron microscopy(TEM),field emission scanning electron microscopy(FESEM),energy dispersive X-ray(EDX)analysis and photoluminescence spectroscopy(PL).The results reveal that the as-svnthesized In-doped SnO_2 zigzag-shaped nanostructures have tetragonal rutile structure with high crvstallinities and lengths of up to tens of micrometers.A possible growth mechanism for the fonnation of different morphologies was proposed.The photoluminescence property of the zigzag nanostructures at room temperature was also investigated,and five peaks were obtained at 400 nm,452 nm,470 nm,487 nm and 497 nm,respectively.