CAJ | 학술논문

合成了新配合物[N(CH_3)_4]_2[Eu_2(btb)_4](H_2btb=4,4'-双(4",4",4",-三氟代-1",3"-二氧代丁基)联苯).通过元素分析、红外光谱、紫外光谱对配合物的结构予以表征.在近紫外激发下,该配合物发射出强的铕离子特征红光.监控614nm的发射光,其激发光谱在391nm处具有很强的激发强度,能够被InGaN芯片发射光有效激发而发红光.将该配合物与395 nm发射的InGaN芯片组合制成了红色发光二极管,当配合物和硅树脂的质量比为1:30时,红色发光二极管的色坐标为x=0.6214,y=0.3159,器件的发光效率为0.59 lm·w~(-1).结果表明,配合物[N(CH_3)_4]_2[Eu_2(btb)_4]是制作白光二极管可供选用的红色发光材料.
합성료신배합물[N(CH_3)_4]_2[Eu_2(btb)_4](H_2btb=4,4'-쌍(4",4",4",-삼불대-1",3"-이양대정기)련분).통과원소분석、홍외광보、자외광보대배합물적결구여이표정.재근자외격발하,해배합물발사출강적유리자특정홍광.감공614nm적발사광,기격발광보재391nm처구유흔강적격발강도,능구피InGaN심편발사광유효격발이발홍광.장해배합물여395 nm발사적InGaN심편조합제성료홍색발광이겁관,당배합물화규수지적질량비위1:30시,홍색발광이겁관적색좌표위x=0.6214,y=0.3159,기건적발광효솔위0.59 lm·w~(-1).결과표명,배합물[N(CH_3)_4]_2[Eu_2(btb)_4]시제작백광이겁관가공선용적홍색발광재료.
A complex [N(CH_3)_4]_2[Eu_2(bth)_4] (H_2btb =4, 4'-Bis (4", 4", 4", -trifluoro-1", 3"-di-oxobutyl)-biphenyl) was synthesized. Its structure was characterized by elemental analysis, IR and UV. The complex emitted red luminescence, characteristic of the ~5D_0→~7F_J (J= 0～4) emission bands of Eu~(3+) under near UV irradiation. Monitored at 614 nm, the strongest excitation wavelength was located at 391 nm, which well matched to the emission light of InGaN chip. A red conversion light-emitting diodes (LEDs) device was fabricated by coating complex onto InGaN-based-LED chip that emitted 395 nm. When the mass ratio of the europium complex to the silicone was I: 30, the LEDs CIE chromaticity coordinates were x =0. 6214, y =0.3159, the luminescence efficiency of devices was 0.59 lm·W~(-1). The results indicated that the complex [N (CH_3) _4]_2 [Eu_2(btb)_4] could act as red component in the fabrication of white LED.