物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2011年
1期
39-46
,共8页
白燕枝%赵高峰%沈学锋%孙建敏%王渊旭
白燕枝%趙高峰%瀋學鋒%孫建敏%王淵旭
백연지%조고봉%침학봉%손건민%왕연욱
密度泛函理论%TbSin团簇%稳定性%磁矩
密度汎函理論%TbSin糰簇%穩定性%磁矩
밀도범함이론%TbSin단족%은정성%자구
Density functional theory%TbSin cluster%Stability%Magnetic moment
利用相对论密度泛函理论在广义梯度近似下研究TbSin(n=2-13)团簇的结构、稳定性、电子和磁学性质.对团簇的平均结合能、离解能、电荷转移、最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的能级差、Mulliken电荷分析和磁学性质进行了计算和讨论.TbSin团簇并没有像实验推测的那样在n=10形成嵌入式的结构.我们推断电子亲和势的急剧变化不仅与嵌入式的结构有关,而且与电子的固有稳定性相关.Mulliken电荷分析表明电荷总是从Tb原子转向Si原子.团簇的磁矩主要局域在Tb原子的周围,并且主要由f电子贡献,f电子表现出局域性并且不参与化学成键.TbSi10为例的分波态密度分析表明Tb与Si原子间存在很强的sp轨道杂化.
利用相對論密度汎函理論在廣義梯度近似下研究TbSin(n=2-13)糰簇的結構、穩定性、電子和磁學性質.對糰簇的平均結閤能、離解能、電荷轉移、最高佔據分子軌道(HOMO)和最低未佔據分子軌道(LUMO)的能級差、Mulliken電荷分析和磁學性質進行瞭計算和討論.TbSin糰簇併沒有像實驗推測的那樣在n=10形成嵌入式的結構.我們推斷電子親和勢的急劇變化不僅與嵌入式的結構有關,而且與電子的固有穩定性相關.Mulliken電荷分析錶明電荷總是從Tb原子轉嚮Si原子.糰簇的磁矩主要跼域在Tb原子的週圍,併且主要由f電子貢獻,f電子錶現齣跼域性併且不參與化學成鍵.TbSi10為例的分波態密度分析錶明Tb與Si原子間存在很彊的sp軌道雜化.
이용상대론밀도범함이론재엄의제도근사하연구TbSin(n=2-13)단족적결구、은정성、전자화자학성질.대단족적평균결합능、리해능、전하전이、최고점거분자궤도(HOMO)화최저미점거분자궤도(LUMO)적능급차、Mulliken전하분석화자학성질진행료계산화토론.TbSin단족병몰유상실험추측적나양재n=10형성감입식적결구.아문추단전자친화세적급극변화불부여감입식적결구유관,이차여전자적고유은정성상관.Mulliken전하분석표명전하총시종Tb원자전향Si원자.단족적자구주요국역재Tb원자적주위,병차주요유f전자공헌,f전자표현출국역성병차불삼여화학성건.TbSi10위례적분파태밀도분석표명Tb여Si원자간존재흔강적sp궤도잡화.
The geometries,stability,and electronic and magnetic properties of TbSin(n=2-13)clusters were systematically investigated using relativistic density functional theory(DFT)within the generalized gradient approximation.The average binding energies,dissociation energies,charge transfer,the highest occupied molecular orbital and the lowest unoccupied molecular orbital(HOMO-LUMO)gaps,Mulliken populations(MP),and magnetic properties were calculated and were discussed.The TbSin(n=2-13)clusters do not form encapsulated structures at n=10.We conclude that the stability of TbSin is consistent with the encapsulated geometric structure and also with the inherent electronic stabilization.Furthermore,results of the calculated Mulliken populations show that the charge always transfers from Tb to Si.The magnetic moment is largely located on Tb and is mainly populated by f-block electrons.The f electrons are very localized and to a large extent not responsible for chemical bonding.The partial density of states(PDOS)of TbSi10 shows that there is strong sp hybridization between Tb and Si.