CAJ | 학술논문

采用SiH4-C3H8-H2气体反应体系在SiO2/Si复合衬底上进行了SiC薄膜的APCVD生长.实验结果表明,H2表面预处理温度过高或时间过长会导致衬底表面SiO2层熔化再结晶或被腐蚀掉.通过"先硅化再碳化"的工艺方法可以较好地解决SiO2/Si复合衬底上SiC成核困难以及粘附性差的问题,同时还可以有效抑制SiO2中的O原子向SiC生长膜扩散.选择预处理温度和薄膜生长温度为1180℃、H2预处理、SiH4硅化和C3H8碳化时间均为30s的最佳生长条件时,可以得到〈111〉晶向择优生长的多晶3C-SiC外延薄膜,薄膜生长速率约为2.0～2.5nm/min.
채용SiH4-C3H8-H2기체반응체계재SiO2/Si복합츤저상진행료SiC박막적APCVD생장.실험결과표명,H2표면예처리온도과고혹시간과장회도치츤저표면SiO2층용화재결정혹피부식도.통과"선규화재탄화"적공예방법가이교호지해결SiO2/Si복합츤저상SiC성핵곤난이급점부성차적문제,동시환가이유효억제SiO2중적O원자향SiC생장막확산.선택예처리온도화박막생장온도위1180℃、H2예처리、SiH4규화화C3H8탄화시간균위30s적최가생장조건시,가이득도〈111〉정향택우생장적다정3C-SiC외연박막,박막생장속솔약위2.0～2.5nm/min.
SiC thin films were grown on SiO2/Si structures via atmospheric pressure chemical vapor deposition (APCVD) process with SiH4-C3H8-H2 reaction system. Experimental results show that the SiO2 layer on the Si substrates can be melted and reconstructed or removed completely by H2 when the surface pretreatment temperature is too high or the pretreatment time is too long. A special process named "silicification followed by carbonization" was adopted to solve the problems such as SiC grains forming on the SiO2 and poor cohesiveness between the SiC and substrate. Furthermore,this method is effective to prevent O atoms diffusing from SiO2 into SiC epilayer. Polycrystal cubic SiC (3C-SiC) films of the preferential orientation grown along < 111 > direction can be obtained under an optimum process condition such as 1180℃, H2 pretreatment, silicification and carbonization time of all 30s,where the growth rate of SiC films is about 2.0-2.5 nm/min.