核电子学与探测技术
覈電子學與探測技術
핵전자학여탐측기술
NUCLEAR ELECTRONICS & DETECTION TECHNOLOGY
2009年
6期
1334-1336,1362
,共4页
热释光%阳极氧化法%氧化铝薄膜
熱釋光%暘極氧化法%氧化鋁薄膜
열석광%양겁양화법%양화려박막
thermoluminescence%anodic oxidation method%alumina oxide films
利用阳极氧化法制备的氧化铝薄膜是非晶态的并且表面呈高度有序的多孔结构.经过太阳光照射后氧化铝薄膜具有明显的热释光现象,发光峰值出现在190℃,表明其对太阳光敏感.经过电子束辐照后薄膜的热释光特性与制备时电解液浓度和退火处理的时间有关,其中制备过程中电解液浓度为0.4mol/L热释光现象最明显,退火时间为5小时的热释光现象最明显.
利用暘極氧化法製備的氧化鋁薄膜是非晶態的併且錶麵呈高度有序的多孔結構.經過太暘光照射後氧化鋁薄膜具有明顯的熱釋光現象,髮光峰值齣現在190℃,錶明其對太暘光敏感.經過電子束輻照後薄膜的熱釋光特性與製備時電解液濃度和退火處理的時間有關,其中製備過程中電解液濃度為0.4mol/L熱釋光現象最明顯,退火時間為5小時的熱釋光現象最明顯.
이용양겁양화법제비적양화려박막시비정태적병차표면정고도유서적다공결구.경과태양광조사후양화려박막구유명현적열석광현상,발광봉치출현재190℃,표명기대태양광민감.경과전자속복조후박막적열석광특성여제비시전해액농도화퇴화처리적시간유관,기중제비과정중전해액농도위0.4mol/L열석광현상최명현,퇴화시간위5소시적열석광현상최명현.
Alumina oxide films prepared by anodic oxidation method are amorphous and have highly or-dered pore structures. The alumina oxide films irradiated with sunlight have obvious thermoluminescence (TL)phenomenon, the glow peak occurs at 190℃, and this shows that the films are sensitive to sun-light. The TL relative intensity of the films after electron-besm irradiation is related to electrolyte con-centration and annealing time. When electrolyte concentration is 0. 4mol/L, the films present stronger TL intensity. When annealing time is 5 hours, the films present more obvious TL phenomenon.