CAJ | 학술논문

建立了新型半导体功率器件—双极型压控晶体管（ BJMOSFET）的直流解析模型，通过提取模型参数，运用电路模拟软件 PSPICE的多瞬态分析法对 BJMOSFET的直流特性进行了模拟，分析得出这种新型器件在相同结构参数和同等外界条件下与传统 MOSFET相比，电流密度提高 30％～ 40％。
건립료신형반도체공솔기건—쌍겁형압공정체관（ BJMOSFET）적직류해석모형，통과제취모 형삼수，운용전로모의연건 PSPICE적다순태분석법대 BJMOSFET적직류특성진행료모의，분석득 출저충신형기건재상동결구삼수화동등외계조건하여전통 MOSFET상비，전류밀도제고 30％～ 40％。
The DC analytical model has been built for the bipolar voltage control transistor which is a novel semiconductor power device. Appling the multiple－ transient of the PSPICE software, the DC characteristically graphs of BJMOSFET has been simulated. The results show that the current density of BJMOSFET is 30～ 40％ larger than that of power MOSFET under the same operating conditions and structure parameters.