半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
11期
1674-1678
,共5页
郝跃%岳远征%冯倩%张进城%马晓华%倪金玉
郝躍%嶽遠徵%馮倩%張進城%馬曉華%倪金玉
학약%악원정%풍천%장진성%마효화%예금옥
AlGaN/GaN%MOS-HEMT%超薄Al2O3
AlGaN/GaN%MOS-HEMT%超薄Al2O3
AlGaN/GaN%MOS-HEMT%초박Al2O3
AlGaN/GaN%MOS-HEMT%ultrathin Al2O3
报道了一种利用原子层淀积(ALD)生长超薄(3.5nm)Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).新型AlGaN/GaN MOS-HEMT器件栅长1μm,栅宽120μm,栅压为+3.0V时最大饱和输出电流达到720mA/mm,最大跨导达到130mS/mm,开启电压保持在-5.0V,特征频率和最高振荡频率分别为10.1和30.8GHz.
報道瞭一種利用原子層澱積(ALD)生長超薄(3.5nm)Al2O3為柵介質的高性能AlGaN/GaN金屬氧化物半導體高電子遷移率晶體管(MOS-HEMT).新型AlGaN/GaN MOS-HEMT器件柵長1μm,柵寬120μm,柵壓為+3.0V時最大飽和輸齣電流達到720mA/mm,最大跨導達到130mS/mm,開啟電壓保持在-5.0V,特徵頻率和最高振盪頻率分彆為10.1和30.8GHz.
보도료일충이용원자층정적(ALD)생장초박(3.5nm)Al2O3위책개질적고성능AlGaN/GaN금속양화물반도체고전자천이솔정체관(MOS-HEMT).신형AlGaN/GaN MOS-HEMT기건책장1μm,책관120μm,책압위+3.0V시최대포화수출전류체도720mA/mm,최대과도체도130mS/mm,개계전압보지재-5.0V,특정빈솔화최고진탕빈솔분별위10.1화30.8GHz.
We report on a GaN metal-oxide-semiconductor high electron mobility transistor(MOS-HEMT)using atomic-layer deposited(ALD)Al2O3 as the gate dielectric.Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced.The drain current of this 1μm gatelength MOS-HEMT can reach 720mA/mm at+3.0V gate bias.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively.
