CAJ | 학술논문

利用磁控溅射法,在Si(100)衬底上制备了不同厚度的非晶导电薄膜Ni-Al底电极,并采用直滴法、退火工艺和掩膜技术,首先制备了偏氟乙烯-三氟乙烯P(VDF-TrFE)共聚物铁电薄膜,并构架了Al/ P(VDF-TrFE)/Ni-Al/Si铁电电容器异质结.采用X线衍射仪(XRD)、铁电测试仪(Precision LC unit)等测试手段对薄膜的性能进行了表征.结果表明:Ni-Al薄膜厚度对偏氟乙烯-三氟乙烯共聚物薄膜的漏电流产生较大影响,当厚度为36 nm时,其漏电流密度达到2.09×10~(-5) A/cm~2;所构架的Al/ P(VDF-TrFE) /Ni-Al /Si电容器呈现2种漏电机理,在较低的电场范围内,电容器的导电机理为欧姆导电机理,在高电场下为界面肖特基导电机理.
이용자공천사법,재Si(100)츤저상제비료불동후도적비정도전박막Ni-Al저전겁,병채용직적법、퇴화공예화엄막기술,수선제비료편불을희-삼불을희P(VDF-TrFE)공취물철전박막,병구가료Al/ P(VDF-TrFE)/Ni-Al/Si철전전용기이질결.채용X선연사의(XRD)、철전측시의(Precision LC unit)등측시수단대박막적성능진행료표정.결과표명:Ni-Al박막후도대편불을희-삼불을희공취물박막적루전유산생교대영향,당후도위36 nm시,기루전류밀도체도2.09×10~(-5) A/cm~2;소구가적Al/ P(VDF-TrFE) /Ni-Al /Si전용기정현2충루전궤리,재교저적전장범위내,전용기적도전궤리위구모도전궤리,재고전장하위계면초특기도전궤리.
Ni-Al films with different thicknesses used as the bottom electrode layers are prepared on Si(100) at room temperature by magnetron sputtering method, and P(VDF-TrFE) copolymer film is prepared by direct dripping method, which is followed by an annealing process to further obtain Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor heterostructures through a shadow mask. Various techniques, such as X-ray diffraction (XRD), ferroelectric tester (Precision LC unit) have been employed to characterize the microstructure and ferroelectric properties of the ferroelectric capacitors. It is found that thickness of Ni-Al film have a large effect on leakage current of P(VDF-TrFE) copolymer film. When the thickness of Ni-Al film is 36 nm, leakage current density of P(VDF-TrFE) copolymer film is 2.09×10~(-5) A/cm~2. Leakage current mechanism of the Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor is further investigated, it is found that Al/ P(VDF-TrFE)/Ni-Al/Si corresponds to Ohmic conduction behavior at low electric field and Schottky emission at higher electric field.