液晶与显示
液晶與顯示
액정여현시
CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS
2007年
6期
687-693
,共7页
高阳%张燕萍%王莉莉%张哲娟%潘立坤%陈弈卫%孙卓%杨介信
高暘%張燕萍%王莉莉%張哲娟%潘立坤%陳弈衛%孫卓%楊介信
고양%장연평%왕리리%장철연%반립곤%진혁위%손탁%양개신
碳纳米管%场发射性能%石墨衬底%生长温度%Ni(NO3)2溶液
碳納米管%場髮射性能%石墨襯底%生長溫度%Ni(NO3)2溶液
탄납미관%장발사성능%석묵츤저%생장온도%Ni(NO3)2용액
carbon nanotubes%field emission properties%graphite substrate%growth temperature%Ni(NO3)2 solution
将石墨衬底浸泡于0.5 mol/L Ni(NO3)2溶液中一段时间,之后利用低压化学气相沉积法在不同温度的条件下生长碳纳米管薄膜.研究了碳纳米管的生长温度对其场发射性能的影响.通过扫描电子显微镜和拉曼光谱对生长的碳纳米管薄膜的表征发现,随着碳纳米管的生长温度的增加,碳纳米管的直径与相应拉曼光谱中的G峰和D峰(ID/IG)的峰强比减小.同样,碳纳米管的G峰的半峰宽随着碳纳米管的生长温度的增加而减小,这表明碳纳米管的石墨化程度的增强.实验中发现,碳纳米管的场发射性能依赖于碳纳米管的生长温度.
將石墨襯底浸泡于0.5 mol/L Ni(NO3)2溶液中一段時間,之後利用低壓化學氣相沉積法在不同溫度的條件下生長碳納米管薄膜.研究瞭碳納米管的生長溫度對其場髮射性能的影響.通過掃描電子顯微鏡和拉曼光譜對生長的碳納米管薄膜的錶徵髮現,隨著碳納米管的生長溫度的增加,碳納米管的直徑與相應拉曼光譜中的G峰和D峰(ID/IG)的峰彊比減小.同樣,碳納米管的G峰的半峰寬隨著碳納米管的生長溫度的增加而減小,這錶明碳納米管的石墨化程度的增彊.實驗中髮現,碳納米管的場髮射性能依賴于碳納米管的生長溫度.
장석묵츤저침포우0.5 mol/L Ni(NO3)2용액중일단시간,지후이용저압화학기상침적법재불동온도적조건하생장탄납미관박막.연구료탄납미관적생장온도대기장발사성능적영향.통과소묘전자현미경화랍만광보대생장적탄납미관박막적표정발현,수착탄납미관적생장온도적증가,탄납미관적직경여상응랍만광보중적G봉화D봉(ID/IG)적봉강비감소.동양,탄납미관적G봉적반봉관수착탄납미관적생장온도적증가이감소,저표명탄납미관적석묵화정도적증강.실험중발현,탄납미관적장발사성능의뢰우탄납미관적생장온도.
Carbon nanotubes(CNTs)were synthesized on graphite substrates immersed in 0.5 mol/L Ni(NO3)2 solution by low pressure chemical vapor deposition at different temperatures.The influence of growth temperature ranged from 500℃ to 700℃ on the field emission properties of the CNTs was studied.Scanning electron microscope and Raman spectroscopy measurements indicated that the diameters of the CNTs and intensity ratio of G and D bands (ID)/(IG)decreased with the increase of the growth temperature.The full width at half maximum of G peak which also decreased with increasing of the growth temperature showed the enhancement of the graphitization of CNTs.And it is found that the field emission properly of the CNTs was dependant on the growth temperature.