CAJ | 학술논문

利用ISE软件的水动力学模型对不同材料结构的AlAs/GaAs/InGaAs 双势垒共振隧穿二极管(DBRTD)的直流特性进行了模拟.当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时,可以观察到DBRTD直流特性也随之改变.采用薄的子阱厚度、高的掺杂浓度以及恰当的间隔层厚度、势垒厚度和高度,可以提高RTD器件的峰谷电流比(PVCR)和峰电流密度,从而满足实际应用的需要.
이용ISE연건적수동역학모형대불동재료결구적AlAs/GaAs/InGaAs 쌍세루공진수천이겁관(DBRTD)적직류특성진행료모의.당세루후도、세루고도、자정후도、간격층후도、참잡농도개변시,가이관찰도DBRTD직류특성야수지개변.채용박적자정후도、고적참잡농도이급흡당적간격층후도、세루후도화고도,가이제고RTD기건적봉곡전류비(PVCR)화봉전류밀도,종이만족실제응용적수요.
Direct current (DC) characteristics of AlAs/GaAs/InGaAs double barriers resonant tunneling diodes (DBRTDs) are simulated under different material structures parameters by hydrodynamic model of ISE software. With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed. In order to achieve high peak-valley current ratio (PVCR) and peak current density in term of application consideration, it is necessary to adopt thin sub-well width and high n-doping concentration as well as other appropriate parameters including spacer width, barrier width and height in the design of DBRTDs.