人工晶体学报
人工晶體學報
인공정체학보
2005年
2期
278-282,223
,共6页
彭观良%邹军%庄漪%张涟翰%周国清%周圣明%徐军%干福熹
彭觀良%鄒軍%莊漪%張漣翰%週國清%週聖明%徐軍%榦福熹
팽관량%추군%장의%장련한%주국청%주골명%서군%간복희
晶体生长%提拉法%γ-LiAlO2%外延%GaN%衬底%红外
晶體生長%提拉法%γ-LiAlO2%外延%GaN%襯底%紅外
정체생장%제랍법%γ-LiAlO2%외연%GaN%츤저%홍외
crystal growth%Czochralski technique%γ-LiAlO2%epitaxy%GaN%substrate%infrared
由于与GaN晶格失配小(约1.4%),γ-LiAlO2单晶有望成为一种很有希望的CaN外延衬底材料.本文使用提拉法生长出了尺寸达φ45×50mm3的γ-LiAlO2单晶.对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析,结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8).γ-LiAlO2晶体化学稳定性差,在室温时轻微水解.当在空气中于1100℃退火70h,γ-LiAlO2晶体挥发出锂组分,在表面产生缺锂相(LiAl5O8).值得注意的是,在γ-LiAlO2晶体的红外光谱区不存在氢氧根吸收带.
由于與GaN晶格失配小(約1.4%),γ-LiAlO2單晶有望成為一種很有希望的CaN外延襯底材料.本文使用提拉法生長齣瞭呎吋達φ45×50mm3的γ-LiAlO2單晶.對該晶體毛坯的各箇有代錶性的位置作瞭X射線粉末衍射(XRPD)分析,結果錶明僅僅在晶體毛坯的底部生成瞭一種缺鋰相(LiAl5O8).γ-LiAlO2晶體化學穩定性差,在室溫時輕微水解.噹在空氣中于1100℃退火70h,γ-LiAlO2晶體揮髮齣鋰組分,在錶麵產生缺鋰相(LiAl5O8).值得註意的是,在γ-LiAlO2晶體的紅外光譜區不存在氫氧根吸收帶.
유우여GaN정격실배소(약1.4%),γ-LiAlO2단정유망성위일충흔유희망적CaN외연츤저재료.본문사용제랍법생장출료척촌체φ45×50mm3적γ-LiAlO2단정.대해정체모배적각개유대표성적위치작료X사선분말연사(XRPD)분석,결과표명부부재정체모배적저부생성료일충결리상(LiAl5O8).γ-LiAlO2정체화학은정성차,재실온시경미수해.당재공기중우1100℃퇴화70h,γ-LiAlO2정체휘발출리조분,재표면산생결리상(LiAl5O8).치득주의적시,재γ-LiAlO2정체적홍외광보구불존재경양근흡수대.
γ-LiAlO2 single crystals were anticipated to act as a promising substrate material for the epitaxy of GaN because of the little lattice misfit ( about 1.4% ) between each other. In the present work, largesize γ-LiAlO2 single crystal with dimension of φ45 × 50mm3 has been grown by Czochralski technique.Various representative positions of the crystal boule were examined using X-ray powder diffraction (XRPD) analysis. Only in the bottom of the crystal boule there produced a kind of lithium-poor phase (LiAl5 O8 ). The γ-LiAlO2 crystal exhibits a poor chemical stability because it hydrolyzes slightly at room temperature. When the γ-LiAlO2 crystal was annealed for 70h at 1100℃ in air-atmosphere, it volatilizes a lithium component, and produces a lithium-poor phase ( LiAl5 O8 ) layer on the surface. It is noteworthy that no hydroxyl absorption band presents in the infrared spectra region of γ-LiAlO2 crystals.
