上海交通大学学报（英文版）
上海交通大學學報（英文版）
상해교통대학학보（영문판）
THE EIGHTH EDITORIAL BOARD OF JOURNAL OF SHANGHAI JIAOTONG UNIVERSITY
2004年
4期
81-84
,共4页
赵占霞%崔容强%孟凡英%于化丛%周之斌
趙佔霞%崔容彊%孟凡英%于化叢%週之斌
조점하%최용강%맹범영%우화총%주지빈
HF sputtering%low temperature%nanocrystalline silicon%heterojunction solar cell
This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.
