CAJ | 학술논문

提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β－C3N4,P－C3N4 或－(C2N2)n－的最可能表面反应,然后通过求解这个热力学模型计算了生长参量空间中不同类型薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。
제출일개용자공천사제비탄화규박막적간화열역학모형。수선선출구성β－C3N4,P－C3N4 혹－(C2N2)n－적최가능표면반응,연후통과구해저개열역학모형계산료생장삼량공간중불동류형 박막정적구역적분계선。저사결과여일사실험결과흔호지부합。
A simple thermodynamic model for fabricating carbon nitride film via magnetron sputtering is suggested. Firstly the most possible surface reactions synthesizing β －C3N4, P－C3N4 or －(C2N2)n－ are selected. Then by solving the thermodynamic model, the partition lines in the growth parameter space are calculated. These lines show the regions where different kinds of films can be deposited. The results are in good agreement with several experimental data.