CAJ | 학술논문

利用射频磁控溅射方法，制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2∶Al/Si/SiO2∶Al)/p-Si结构，用磁控溅射制备纳米SiO2∶Al时所用的SiO2/Al复合靶中的Al的面积百分比为1%．上述两种结构中Si层厚度均为1—3nm，间隔为0.2nm．为了对比研究，还制备了Si层厚度为零的样品．这两种结构在900℃氮气下退火30min，正面蒸半透明Au膜，背面蒸Al作欧姆接触后，都在正向偏置下观察到电致发光（EL）．在一定的正向偏置下，EL强度和峰位以及电流都随Si层厚度的增加而同步振荡，位相相同．但掺Al结构的发光强度普遍比不掺Al结构强．另外，这两种结构的EL具体振荡特性有明显不同．对这两种结构的电致发光的物理机制和SiO2中掺Al的作用进行了分析和讨论．
이용사빈자공천사방법，제성납미SiO2층후도일정이납미Si층후도불동적납미(SiO2/Si/SiO2)/p-Si결구화납미(SiO2∶Al/Si/SiO2∶Al)/p-Si결구，용자공천사제비납미SiO2∶Al시소용적SiO2/Al복합파중적Al적면적백분비위1%．상술량충결구중Si층후도균위1—3nm，간격위0.2nm．위료대비연구，환제비료Si층후도위령적양품．저량충결구재900℃담기하퇴화30min，정면증반투명Au막，배면증Al작구모접촉후，도재정향편치하관찰도전치발광（EL）．재일정적정향편치하，EL강도화봉위이급전류도수Si층후도적증가이동보진탕，위상상동．단참Al결구적발광강도보편비불참Al결구강．령외，저량충결구적EL구체진탕특성유명현불동．대저량충결구적전치발광적물리궤제화SiO2중참Al적작용진행료분석화토론．
The nanometer (SiO2/Si/SiO2)/p-Si and nanometer(SiO2∶Al/Si/SiO2∶Al)/p-Si structures with Si layers having twelve different thicknesses have been fabricated with the two-target alternative magnetron sputtering technique. The ratio of Al to SiO2 in the composite SiO2/Al target is 1∶99. The thickness of Si layers in both the structures is from 1nm to 3nm with an interval of 0.2nm.Samples with Si layer of 0nm are also made for comparison.These two structures having been annealing at 900℃ in N2 for 30min, thin Al films were deposited on the back of them to make good ohmic contacts，and then semitransparent Au films on the samples' front surfaces. At a forward bias, electroluminescence (EL) is observed from the Au/nanometer (SiO2/Si/SiO2)/p-Si and Au/nanometer (SiO2∶Al/Si/SiO2∶Al)/p-Si structures. It is found that the EL peak intensity, peak wavelength and current synchronously swing with the increasing Si layer thickness. But the EL intensity of Au/nanometer (SiO2∶Al/Si/SiO2∶Al)/p-Si structure is stronger than that of Au/nanometer (SiO2/Si/SiO2)/p-Si structure. And the swinging properties of the two structures are different. The EL mechanism of the two structures and the effects of doping Al into SiO2 layers have been discussed.