CAJ | 학술논문

应用光致发光(PL)、电容-电压(C-V)、深能级瞬态谱(DLTS)和光电导(PC)技术系统研究Al掺杂ZnS1-xTex中与Al有关的类DX中心．实验结果表明，ZnS1-xTex中存在与Ⅲ-Ⅴ族半导体DX中心相类似的性质．获得与Al有关的类DX中心光离化能Ei(～1.0eV和2.0eV)和发射势垒Ee(0.21eV和0.39eV)，这表明ZnS1-xTex大晶格弛豫的出现是由类DX中心引起．
응용광치발광(PL)、전용-전압(C-V)、심능급순태보(DLTS)화광전도(PC)기술계통연구Al참잡ZnS1-xTex중여Al유관적류DX중심．실험결과표명，ZnS1-xTex중존재여Ⅲ-Ⅴ족반도체DX중심상유사적성질．획득여Al유관적류DX중심광리화능Ei(～1.0eV화2.0eV)화발사세루Ee(0.21eV화0.39eV)，저표명ZnS1-xTex대정격이예적출현시유류DX중심인기．
Al-related DX-like centers were observed in n-type Al-dopedZnS1-xTex epilayers grown by molecular beam epitaxy on GaAs substrates.The photoluminescence,capacitance-voltage,deep level transient spectroscopy,and photoconductivity spectroscopy revealed that the behavior of Al donors in ZnS1-xTex was similar to the so-called DX centers in AlxGa1-xAs.The optical ionization energies (Ei) and emission barrier (Ee) for the observed two Al-related DX-like centers were determined as Ei～1.0eV and ～2.0eV and Ee－0.21eV and 0.39eV，respectively.It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1-xTex.