CAJ | 학술논문

对在GaAs (001) 衬底上用金属有机物气相外延(MOVPE)方法生长的GaN薄膜的湿法腐蚀特性进行了研究.所用腐蚀液包括HCl、H3PO4、KOH水溶液以及熔融KOH,腐蚀温度为90～300℃.实验发现不同的腐蚀液在样品表面腐蚀出不同形状的腐蚀坑.KOH溶液腐蚀出长方形的坑,长边平行于(111)A面,表明沿相互垂直的〈110〉晶向的腐蚀特性不同.用不同晶面相对反应性的差别定性解释了腐蚀的这种非对称性.此外,还发现KOH水溶液更有可能用于显示立方相GaN外延层中的层错.
대재GaAs (001) 츤저상용금속유궤물기상외연(MOVPE)방법생장적GaN박막적습법부식특성진행료연구.소용부식액포괄HCl、H3PO4、KOH수용액이급용융KOH,부식온도위90～300℃.실험발현불동적부식액재양품표면부식출불동형상적부식갱.KOH용액부식출장방형적갱,장변평행우(111)A면,표명연상호수직적〈110〉정향적부식특성불동.용불동정면상대반응성적차별정성해석료부식적저충비대칭성.차외,환발현KOH수용액경유가능용우현시립방상GaN외연층중적층착.
Wet etching characteristics of cubic GaN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etc hed in HCl,H3PO4,KOH aqueous solutions,and molten KOH at temperatures in th e range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH-based solutions produce rectangular pit s rather than square pits.The etch pits elongate in [1 1 0] direction,indicating asymmetric etching behavior in the two orthogonal 〈110〉 directions.An explanation based on relative reactivity o f the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution w ould be more suitable than molten KOH and the two acids for the evaluation of st acking faults in c-GaN epilayers.