CAJ | 학술논문

利用变温霍尔和电流-电压特性(I-V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量.在非掺退火后的半导体磷化铟样品中可以测到缺陷带电导,这与自由电子浓度较低、有一定补偿度的原生非掺磷化铟的情况类似.非掺SI-InP表现出不同于原生掺铁的SI-InP的I-V特性,在一直到击穿为止的外加电场范围内呈欧姆特性,而掺铁SI-InP的I-V具有与陷阱填充有关非线性特征.根据空间电荷限制电流的理论,这种现象可以解释为非掺SI-InP中没有未被电子占据的空的深能级缺陷.
이용변온곽이화전류-전압특성(I-V)량충방법분별대반도체화반절연적퇴화비참린화인재료진행료측량.재비참퇴화후적반도체린화인양품중가이측도결함대전도,저여자유전자농도교저、유일정보상도적원생비참린화인적정황유사.비참SI-InP표현출불동우원생참철적SI-InP적I-V특성,재일직도격천위지적외가전장범위내정구모특성,이참철SI-InP적I-V구유여함정전충유관비선성특정.근거공간전하한제전류적이론,저충현상가이해석위비참SI-InP중몰유미피전자점거적공적심능급결함.
The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage(I-V)measurements for semiconducting and semi-insulating samples,respectively.Defect band conduction in annealed semiconducting InP can be observed from TDH measurement,which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation.The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown.Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.