半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
6期
1075-1080
,共6页
杨青森%彭应全%邢宏伟%李训栓%袁建挺%马朝柱%赵明
楊青森%彭應全%邢宏偉%李訓栓%袁建挺%馬朝柱%趙明
양청삼%팽응전%형굉위%리훈전%원건정%마조주%조명
有机-有机界面限制%温度特性%数值分析
有機-有機界麵限製%溫度特性%數值分析
유궤-유궤계면한제%온도특성%수치분석
organic-organic interface limited%temperature characteristics%numerical analysis
通过对器件的温度特性的研究,能够使器件在合适的温度下保持稳定的工作状态.本文以Miller-Abrahams跳跃传导理论为基础,建立了有机-有机界面限制电流传导的电荷传输的解析模型.依据此模型分析了结构为"注入电极/有机层Ⅰ/有机层Ⅱ/收集电极"的双层薄膜器件在有机界面限制电流传导状态下的电流、电场和载流子分布与工作温度的变化关系.结果表明,在给定的工作电压下,温度升高时降落在层Ⅰ的电压升高,电场增强,而降落在层Ⅱ的电压降低,电场减弱,同时器件的电流增大.
通過對器件的溫度特性的研究,能夠使器件在閤適的溫度下保持穩定的工作狀態.本文以Miller-Abrahams跳躍傳導理論為基礎,建立瞭有機-有機界麵限製電流傳導的電荷傳輸的解析模型.依據此模型分析瞭結構為"註入電極/有機層Ⅰ/有機層Ⅱ/收集電極"的雙層薄膜器件在有機界麵限製電流傳導狀態下的電流、電場和載流子分佈與工作溫度的變化關繫.結果錶明,在給定的工作電壓下,溫度升高時降落在層Ⅰ的電壓升高,電場增彊,而降落在層Ⅱ的電壓降低,電場減弱,同時器件的電流增大.
통과대기건적온도특성적연구,능구사기건재합괄적온도하보지은정적공작상태.본문이Miller-Abrahams도약전도이론위기출,건립료유궤-유궤계면한제전류전도적전하전수적해석모형.의거차모형분석료결구위"주입전겁/유궤층Ⅰ/유궤층Ⅱ/수집전겁"적쌍층박막기건재유궤계면한제전류전도상태하적전류、전장화재류자분포여공작온도적변화관계.결과표명,재급정적공작전압하,온도승고시강락재층Ⅰ적전압승고,전장증강,이강락재층Ⅱ적전압강저,전장감약,동시기건적전류증대.
Temperature characteristics are important for the performance of organic thin film devices. On the basis of the hopping theory of Miller-Abrahams,an analytical model of charge transport for bilayer organic devices under the organic-organic interface limited current conduction is developed. The dependence of current, field,and carrier distribution in bi-layer organic devices with the structure of "injection electrode/Layer Ⅰ/Layer Ⅱ/collection electrode" on temperature are numerically analyzed. We conclude that, for a given applied voltage, when temperature is raised, the voltage of Layer Ⅰ will increase,and the field will be higher. Meanwhile, the voltage of Layer Ⅱ will decrease, the field will become weaker ac-cordingly,and the current of the device will increase.