半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
2期
198-200
,共3页
微波%阶跃恢复二极管%三极管%增益%16倍频器
微波%階躍恢複二極管%三極管%增益%16倍頻器
미파%계약회복이겁관%삼겁관%증익%16배빈기
microwave%step recovery diode%bipolar transistor%gain%16 multiplier
针对微波倍频器的实现途径,介绍了阶跃管倍频和三极管倍频的原理,其中三端非线性电阻微波倍频器可实现有增益倍频,且倍频效率高,稳定性好,在现代通信系统中有着广泛的应用前景.应用ADS软件对倍频电路进行优化仿真,利用集总参数电容和电感对阻抗进行匹配,设计利用晶体三极管通过两次4倍频实现了L波段16倍频,最终成功研制出性能优良的L波段16倍频器,输出功率10.67 dBm,杂波抑制>75 dB,谐波抑制>60 dB,电流仅为120 mA,频谱纯净度较好,温度稳定性较高,能够有效实现倍频功能,满足微波频率源系统的使用要求.
針對微波倍頻器的實現途徑,介紹瞭階躍管倍頻和三極管倍頻的原理,其中三耑非線性電阻微波倍頻器可實現有增益倍頻,且倍頻效率高,穩定性好,在現代通信繫統中有著廣汎的應用前景.應用ADS軟件對倍頻電路進行優化倣真,利用集總參數電容和電感對阻抗進行匹配,設計利用晶體三極管通過兩次4倍頻實現瞭L波段16倍頻,最終成功研製齣性能優良的L波段16倍頻器,輸齣功率10.67 dBm,雜波抑製>75 dB,諧波抑製>60 dB,電流僅為120 mA,頻譜純淨度較好,溫度穩定性較高,能夠有效實現倍頻功能,滿足微波頻率源繫統的使用要求.
침대미파배빈기적실현도경,개소료계약관배빈화삼겁관배빈적원리,기중삼단비선성전조미파배빈기가실현유증익배빈,차배빈효솔고,은정성호,재현대통신계통중유착엄범적응용전경.응용ADS연건대배빈전로진행우화방진,이용집총삼수전용화전감대조항진행필배,설계이용정체삼겁관통과량차4배빈실현료L파단16배빈,최종성공연제출성능우량적L파단16배빈기,수출공솔10.67 dBm,잡파억제>75 dB,해파억제>60 dB,전류부위120 mA,빈보순정도교호,온도은정성교고,능구유효실현배빈공능,만족미파빈솔원계통적사용요구.
For the realization method of microwave frequency multiplier, the principle and design of step recovery diode frequency multiplier and bipolar transistor frequency multiplier were discussed. Tri-port non-line resistant frequency multipliers have high efficiency and stability, and they are widely used in modem communication systems. A better microwave frequency 16 multiplier of L-band was developed by twice 4 multiple. Its circuit was optimized and simulated by ADS and the impedance is matched by capacitance and inductance. The output power of 16 multiplier is 10.67 dBm, spurious is > 75 dB, harmonics is > 60 dB, electric current is 110 mA. It can realize multiplying and satisfy the system of microwave frequency source, because of its pure spectrum and high temperature stability.