CAJ | 학술논문

对FinFET器件(或称三栅MOSFET器件)的二维截面做了解析静电学分析以得出阈电压的计算公式.结果显示,由于三栅结构在高度方向的限制作用,需要引入一个H系数来修正栅电容,随着高度不断变大,它渐近于双栅MOSFET器件的情况.由该解析模型得出的电势分布与数值模拟结果吻合.提出了一个包含量子效应的Fin-FET器件的集约阈电压模型,结果表明,当高度或者顶栅的氧化层厚度变小时,栅电容及阈电压都会上升,这与FinFET设计时发现的趋势是相符合的.
대FinFET기건(혹칭삼책MOSFET기건)적이유절면주료해석정전학분석이득출역전압적계산공식.결과현시,유우삼책결구재고도방향적한제작용,수요인입일개H계수래수정책전용,수착고도불단변대,타점근우쌍책MOSFET기건적정황.유해해석모형득출적전세분포여수치모의결과문합.제출료일개포함양자효응적Fin-FET기건적집약역전압모형,결과표명,당고도혹자정책적양화층후도변소시,책전용급역전압도회상승,저여FinFET설계시발현적추세시상부합적.
A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is per formed to calculate the threshold voltage. The analysis results in a modified gate capacitance with a coefficient H in troduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET. The potential profile obtained analytically at the cross-section agrees well with numerical simulations. A compact threshold voltage model for FinFET, comprising quantum mechanical effects, is then proposed. It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.