8GHz带有RC稳定网络的AIGaN/GaN HEMTs内匹配功率合成放大器的设计
8GHz대유RC은정망락적AIGaN/GaN HEMTs내필배공솔합성방대기적설계
An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
  • 万方数据
    半导体学报 반도체학보
    CHINESE JOURNAL OF SEMICONDUCTORS
    2008年 8期 1445-1448 ,共4页

    曾轩%陈晓娟%刘果果%袁婷婷%陈中子%张辉%王亮%李诚瞻%庞磊%刘新宇%刘键

    증헌%진효연%류과과%원정정%진중자%장휘%왕량%리성첨%방뢰%류신우%류건

    AlGaN/GaN HEMTs%内匹配%功率合成%微波功率放大器 AlGaN/GaN HEMTs%內匹配%功率閤成%微波功率放大器
    AlGaN/GaN HEMTs%내필배%공솔합성%미파공솔방대기
    AlGaN/GaN HEMTs%internally match%power combining%power amplifier
    设计了工作在8GHz的基于AIGaN/GaN HEMTs的内匹配功率合成放大器.输入和输出匹配电路制作在0.381mm厚的氧化铝陶瓷基片上,为了提高整个电路的稳定因子K,在电路输入端增加了片上RC有损网络.在8GHz测出连续波ldB压缩点时的输出功率为PldB=43dBm(20W),线性增益7.3dB,最大PAE为38.1%,合成效率达到70.6%.
    설계료공작재8GHz적기우AIGaN/GaN HEMTs적내필배공솔합성방대기.수입화수출필배전로제작재0.381mm후적양화려도자기편상,위료제고정개전로적은정인자K,재전로수입단증가료편상RC유손망락.재8GHz측출련속파ldB압축점시적수출공솔위PldB=43dBm(20W),선성증익7.3dB,최대PAE위38.1%,합성효솔체도70.6%.
    8GHz 20W internally matched AIGaN/GaN HEMTs have been developed.The input and output matching net-works are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm(20W)power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.
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