电子器件
電子器件
전자기건
JOURNAL OF ELECTRON DEVICES
2009年
2期
338-342,346
,共6页
李恩玲%苑永霞%褚蒙%王雪
李恩玲%苑永霞%褚矇%王雪
리은령%원영하%저몽%왕설
射频集成电路%CMOS混频器%阻抗匹配%线性度
射頻集成電路%CMOS混頻器%阻抗匹配%線性度
사빈집성전로%CMOS혼빈기%조항필배%선성도
radio-frequency integrated circuits%CMOS mixer%impedance matching%linearity
设计了一个用于第三代移动通信的2.1 GHz CMOS下变频混频器,采用TsMC 0.25 μm CMOS工艺.在设计中,用LC振荡回路作电流源实现低电压;并用增大电流和降低跨导的方法提高线性度.在Cadence RF仿真器中对电路进行了模拟,在1.8 V电源电压下,仿真结果为:1 dB压缩点PtdB-10.65 dBm,lIP3 1.25 dBm,转换增益7 dB,噪声系数10.8 dB,功耗14.4 mW,且输入输出端口实现了良好的阻抗匹配.并用Cadence中的Virtuoso Layout Editor软件绘制了电路的版图.
設計瞭一箇用于第三代移動通信的2.1 GHz CMOS下變頻混頻器,採用TsMC 0.25 μm CMOS工藝.在設計中,用LC振盪迴路作電流源實現低電壓;併用增大電流和降低跨導的方法提高線性度.在Cadence RF倣真器中對電路進行瞭模擬,在1.8 V電源電壓下,倣真結果為:1 dB壓縮點PtdB-10.65 dBm,lIP3 1.25 dBm,轉換增益7 dB,譟聲繫數10.8 dB,功耗14.4 mW,且輸入輸齣耑口實現瞭良好的阻抗匹配.併用Cadence中的Virtuoso Layout Editor軟件繪製瞭電路的版圖.
설계료일개용우제삼대이동통신적2.1 GHz CMOS하변빈혼빈기,채용TsMC 0.25 μm CMOS공예.재설계중,용LC진탕회로작전류원실현저전압;병용증대전류화강저과도적방법제고선성도.재Cadence RF방진기중대전로진행료모의,재1.8 V전원전압하,방진결과위:1 dB압축점PtdB-10.65 dBm,lIP3 1.25 dBm,전환증익7 dB,조성계수10.8 dB,공모14.4 mW,차수입수출단구실현료량호적조항필배.병용Cadence중적Virtuoso Layout Editor연건회제료전로적판도.
A 2.1 GHz CMOS down-conversion mixer which iS intended for using in 3 G iS designed based on TSMC 0.25 tan CMOS technology.In this design,a LC oscillating circuit is used to realize the low-vohage design of the current source,and the methods of increasing current and decreasing transconductance are used tO improve the line-arity.The circuit is simulated in the RF emulator of Cadence under 1.8 V supply voltage,and results Of simulation are 1 dB compression point of-10.65 dBm,IIP3 of 1.25 dBrn,the conversion gain of 7 dB,the noise figure of 10.8 dB,and the power consumption of 14.4 mW.There is a good impedance matching between input ports and output ports.And,the layout of the mixer is drawn by means of the Virtuoso I.ayout Editor.