电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2009年
8期
8-10
,共3页
碳纳米管%脉冲电化学沉积%场发射%低密度
碳納米管%脈遲電化學沉積%場髮射%低密度
탄납미관%맥충전화학침적%장발사%저밀도
carbon nanotubes%pulse electrochemical deposition%field emission%low density
利用脉冲电化学沉积技术,以NiSO4·6H2O为电镀液在镀Cr硅基片上沉积低密度、直径在150 nm左右的Ni催化剂颗粒,在此基础上,采用乙炔、氨气作为气源,采用等离子体增强化学气相沉积(PECVD)技术制备分散定向的碳纳米管阵列.研究了等离子体预处理技术对纳米管制备的影响以及该阵列的场发射性能,证明低密度的碳纳米管阵列阴极能有效地降低场屏蔽效应,进而提高场发射性能,其场发射的开启电场强度约为2.39 V/μm.
利用脈遲電化學沉積技術,以NiSO4·6H2O為電鍍液在鍍Cr硅基片上沉積低密度、直徑在150 nm左右的Ni催化劑顆粒,在此基礎上,採用乙炔、氨氣作為氣源,採用等離子體增彊化學氣相沉積(PECVD)技術製備分散定嚮的碳納米管陣列.研究瞭等離子體預處理技術對納米管製備的影響以及該陣列的場髮射性能,證明低密度的碳納米管陣列陰極能有效地降低場屏蔽效應,進而提高場髮射性能,其場髮射的開啟電場彊度約為2.39 V/μm.
이용맥충전화학침적기술,이NiSO4·6H2O위전도액재도Cr규기편상침적저밀도、직경재150 nm좌우적Ni최화제과립,재차기출상,채용을결、안기작위기원,채용등리자체증강화학기상침적(PECVD)기술제비분산정향적탄납미관진렬.연구료등리자체예처리기술대납미관제비적영향이급해진렬적장발사성능,증명저밀도적탄납미관진렬음겁능유효지강저장병폐효응,진이제고장발사성능,기장발사적개계전장강도약위2.39 V/μm.
Using pulse electrochemical deposition methods, the low density nano-particles with diameter about 150 nm of Ni were deposited on silicon wafer coated by Cr in NiSO4 plating solution. Aligned carbon nanotubes were synthesized by plasma enhancement chemical vapor deposition from the gas containing acetylene and ammonia. Pre-etching affection of plasma was also studied. Field emission property was measured for the low density carbon nanotubes arrays, the turn-on electric field strength is about 2.39 V/(m, which shows that the aligned carbon nanotubes with low density can be decreased the screen effect, and enhances the field emission property.
