CAJ | 학술논문

通过直流磁控反应溅射装置,在蓝宝石(0001)衬底和氮化的蓝宝石(0001)衬底上成功制备了氮化铝(AIN)薄膜.利用X射线衍射仪、原子力学显微镜和双光束扫描分光计,研究了蓝宝石氮化对AIN薄膜结构、应力、晶粒尺寸、形貌和光学性质的影响.X射线衍射研究表明:制备的AIN薄膜具有较强的(0002)择优取向,蓝宝石衬底的氮化不仅能够改善AIN结晶质量,而且还可以减少薄膜的残余应力.但是,原子力学显微镜结果表明:在蓝宝石衬底上制备的AIN薄膜的晶粒大小分布比在氮化的蓝宝石衬底上制备的AIN薄膜的晶粒大小分布更加均匀.我们认为,蓝宝石衬底在氮化的过程中形成的AIN具有过多的位错和缺陷,正是这些位错和缺陷造成了在氮化的蓝宝石衬底上制备的AIN薄膜的晶粒大小分布的不均匀性.吸收光谱显示:蓝宝石衬底的氮化并没有对AIN薄膜的光学性质产生明显的改善.
통과직류자공반응천사장치,재람보석(0001)츤저화담화적람보석(0001)츤저상성공제비료담화려(AIN)박막.이용X사선연사의、원자역학현미경화쌍광속소묘분광계,연구료람보석담화대AIN박막결구、응력、정립척촌、형모화광학성질적영향.X사선연사연구표명:제비적AIN박막구유교강적(0002)택우취향,람보석츤저적담화불부능구개선AIN결정질량,이차환가이감소박막적잔여응력.단시,원자역학현미경결과표명:재람보석츤저상제비적AIN박막적정립대소분포비재담화적람보석츤저상제비적AIN박막적정립대소분포경가균균.아문인위,람보석츤저재담화적과정중형성적AIN구유과다적위착화결함,정시저사위착화결함조성료재담화적람보석츤저상제비적AIN박막적정립대소분포적불균균성.흡수광보현시:람보석츤저적담화병몰유대AIN박막적광학성질산생명현적개선.
Aluminum nitride (AIN) films were prepared successfully on sapphire and nitrided sapphire substrates by reactive DC magnetron sputtering.The effect of nitridation of sapphire substrate on the growth of AIN films was studied.The films were characterized by X-ray diffraction (XRD),atomic force microscopy (AFM) and optical absorption spectrum.XRD patterns of AIN films exhibited a strong preferential c-axis orientation,and nitridation of sapphire substrate could improve the crystal quality of AIN films and also decrease the residual stress of films.But AFM results revealed that the grain size distribution of films deposited on nitrided sapphire substrates was not more homogenous than that of films deposited on sapphire substrates,and optical absorption results also showed nitridation of sapphire substrate nearly had no effect on the optical behavior of AIN films.