CAJ | 학술논문

沉积缺陷少、晶粒高度c轴择优生长的ZnO薄膜是制备短波发光器件和压电谐振传感器的关键问题之一.以ZnO为靶材,采用射频磁控溅射法在玻璃衬底上制备纳米ZnO薄膜,实现了室温下强的紫外受激发射和弱的深能级发射.通过对薄膜表面形貌的观测, 以及对X射线衍射(XRD)谱和室温光致发光(PL)谱的分析,研究了不同溅射气压对ZnO薄膜生长、结构和发光性能的影响.结果显示溅射气压在1.9 Pa-3.5 Pa之间,晶粒直径先增大后减小,在2.6 Pa时晶粒生长到最大;在3.2 Pa时薄膜单一取向性最优,以此推断最佳的溅射气压在2.6 Pa-3.2 Pa之间.实验在玻璃衬底上制备出了XRD衍射峰半高宽仅为0.12°的、高度c轴择优生长的ZnO薄膜.
침적결함소、정립고도c축택우생장적ZnO박막시제비단파발광기건화압전해진전감기적관건문제지일.이ZnO위파재,채용사빈자공천사법재파리츤저상제비납미ZnO박막,실현료실온하강적자외수격발사화약적심능급발사.통과대박막표면형모적관측, 이급대X사선연사(XRD)보화실온광치발광(PL)보적분석,연구료불동천사기압대ZnO박막생장、결구화발광성능적영향.결과현시천사기압재1.9 Pa-3.5 Pa지간,정립직경선증대후감소,재2.6 Pa시정립생장도최대;재3.2 Pa시박막단일취향성최우,이차추단최가적천사기압재2.6 Pa-3.2 Pa지간.실험재파리츤저상제비출료XRD연사봉반고관부위0.12°적、고도c축택우생장적ZnO박막.
The ZnO thin films which have unabridged fabric and are highly c-axis oriented is essential to the preparation luminescence apparatus which eradiate shortwave and piezoelectric film resonator. High quality crystal ZnO thin films have been deposited by RF magnetron sputtering on glass substrates. Strong UV photoluminescence and feeble deep energy eradiation are observed at room temperature. Under the different air pressures samples are studied by X-ray diffraction (XRD), PL (photoluminescence) spectrum and AFM. The surface, growth, crystallization condition and photoluminescence are analyzed. When the air pressure is in the range of 1.9 Pa-2.6 Pa, the diameter of grain will increase, when the air pressure augments from 2.6 Pa to 3.5 Pa, the diameter of grain will decrease. When the air pressure is 3.2 Pa, the grains are highly c-axis oriented compared with others. So the optimal air pressure is in the scope of 2.6 Pa-3.2 Pa. Highly c-axis uniquely oriented ZnO thin films with the FWHM of only 0.12° is deposited.