CAJ | 학술논문

设计了一种可在CMOS射频功率放大器中用于功率合成的宽带变压器.通过对变压器的并联和串联两种功率合成形式进行分析与比较,指出了匝数比、功率单元数目以及寄生电阻对变压器功率合成性能的影响;提出了一种片上变压器的设计方法,即采用多层金属叠层并联以及将功放单元内置于变压器线圈中的方式,解决了在CMOS工艺中设计变压器时面临的寄生电阻过大及有效耦合长度不足等困难.设计的变压器在2～3 GHz频段内的损耗小于1.35 dB,其功率合成效率高达76%以上,适合多模多频段射频前端的应用.
설계료일충가재CMOS사빈공솔방대기중용우공솔합성적관대변압기.통과대변압기적병련화천련량충공솔합성형식진행분석여비교,지출료잡수비、공솔단원수목이급기생전조대변압기공솔합성성능적영향;제출료일충편상변압기적설계방법,즉채용다층금속첩층병련이급장공방단원내치우변압기선권중적방식,해결료재CMOS공예중설계변압기시면림적기생전조과대급유효우합장도불족등곤난.설계적변압기재2～3 GHz빈단내적손모소우1.35 dB,기공솔합성효솔고체76%이상,괄합다모다빈단사빈전단적응용.
A wide-band transformer for power combining in CMOS RF power amplifier was designed. Two types of transformers, serial and parallel combining, were analyzed and compared, It has been demonstrated that turn ratio, number of primary windings and parasitic resistor are key factors for power combining performance. By paralleling stacks of multi-layer metal and locating the power cell in windings, an on-chip transformer was designed to overcome large parasitic resistance and insufficient coupling length. The transformer features a maximum loss of 1.35 dB in the frequency band range from 2 GHz to 3 GHz and a power combining efficiency above 76%.