CAJ | 학술논문

建立Ⅲ-V族三元化合物半导体材料的分子束外延生长热力学模型.该模型与实验材料InGaP/GaAs, InGaAs/InP 及已发表的GaAsP/GaAs, InAsP/InP 的数据吻合得很好.将晶格应变能ΔG及脱附对温度敏感这两个因素同时纳入热力学模型中,束流和生长温度直接影响合金组分,晶格应变能是合金组分的函数.热力学模型计算结果反映了束流和生长温度是生长过程中最主要的影响因素.讨论和分析了四元半导体材料InGaAsP/GaAs的热力学生长模型.
건립Ⅲ-V족삼원화합물반도체재료적분자속외연생장열역학모형.해모형여실험재료InGaP/GaAs, InGaAs/InP 급이발표적GaAsP/GaAs, InAsP/InP 적수거문합득흔호.장정격응변능ΔG급탈부대온도민감저량개인소동시납입열역학모형중,속류화생장온도직접영향합금조분,정격응변능시합금조분적함수.열역학모형계산결과반영료속류화생장온도시생장과정중최주요적영향인소.토론화분석료사원반도체재료InGaAsP/GaAs적열역학생장모형.
Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary Ⅲ-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ΔG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ΔG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.