CAJ | 학술논문

[目的]为研究李氏禾的耐铬生理和分子机理提供理论依据.[方法]以李氏禾幼苗为试材,分别用含0(对照)、5、30、60 mg/L CrCl3的1/2Hoagland营养液进行培养,培养45 d后收获,分别测定根、茎、叶的生物量,用石蜡切片法观察不同组织显微结构的变化,用火焰原子吸收法测定各组织的铬浓度.[结果]除5 mg/L CrCl3处理外,其他处理根、茎、叶的生物量均随CrCl3浓度的增加而减少,但与对照差异不显著.当CrCl3处理浓度≤30 mg/L时,根、茎、叶和总生物量分别减少8.2%、11.6%、21.5%和13.2%;受铬污染的李氏禾根、叶组织结构与对照无明显差异,但茎的维管束明显缩小;转移系数(叶中铬含量与根中铬含量之比)随CrCl3处理浓度的增加而减小(从1.07减小到0.09).[结论]李氏禾对铬有很强的耐性和积累能力.
[목적]위연구리씨화적내락생리화분자궤리제공이론의거.[방법]이리씨화유묘위시재,분별용함0(대조)、5、30、60 mg/L CrCl3적1/2Hoagland영양액진행배양,배양45 d후수획,분별측정근、경、협적생물량,용석사절편법관찰불동조직현미결구적변화,용화염원자흡수법측정각조직적락농도.[결과]제5 mg/L CrCl3처리외,기타처리근、경、협적생물량균수CrCl3농도적증가이감소,단여대조차이불현저.당CrCl3처리농도≤30 mg/L시,근、경、협화총생물량분별감소8.2%、11.6%、21.5%화13.2%;수락오염적리씨화근、협조직결구여대조무명현차이,단경적유관속명현축소;전이계수(협중락함량여근중락함량지비)수CrCl3처리농도적증가이감소(종1.07감소도0.09).[결론]리씨화대락유흔강적내성화적루능력.
[Objective] The aim was to provide the theoretical basis for researching physiological and molecular mechanism of resistance of Leersia hexandra Swartz on Cr stress.[Method] With L.hexandra seedlings as the tested materials, they were cultured in 1/2 Hoagland solution that contained 0(CK), 5, 30, 60 mg/L CrCl3.After 45 d of culture, the biomass of root, stem, leaf of L.hexandra were determined, and the change of its microstructure in different tissues was observed with paraffin section, Cr concn.in each tissue was determined with flame atomic absorption spectrometry.[Result] Except the treatment with 5 mg/L CrCl3, the biomass of root, stem, leaf of L.hexandra in other treatments were decreased with the increase of CrCl3 concn.but they had no significant difference with that of CK.When CrCl3 ≤30 mg/L, the biomass of root, stem, leaf and total biomass were decreased by 8.2%, 11.6%, 21.5%, 13.2% resp.The tissue structure of root and leaf of L.hexandra polluted by Cr had no obvious difference with that of CK, while the vascular in its stem obviously decreased.The transfer coefficient (ratio of Cr content in leaf and that in root) was decreased with the increase of CrCl3 concn.(from 1.07 to 0.09).[Conclusion] L.hexandra had strong resistance and accumulation ability on Cr.