CAJ | 학술논문

利用氩离子束镀膜技术在SiO2/Si衬底上淀积钛酸锶（SrTiO3）膜，并制成平面型电阻器.结果表明：在实验温区（28～150℃）内，SrTiO3薄膜具有负温度系数电阻特性，且热敏特性比较明显，在室温30℃时，温度系数α达-2.15%℃-1.建立热敏电阻-电容器并联模型，分析了频率对不同温度下薄膜电阻器阻抗的影响.在实验温区内，SrTiO3薄膜的介电常数具有较好的热稳定性.
이용아리자속도막기술재SiO2/Si츤저상정적태산송（SrTiO3）막，병제성평면형전조기.결과표명：재실험온구（28～150℃）내，SrTiO3박막구유부온도계수전조특성，차열민특성비교명현，재실온30℃시，온도계수α체-2.15%℃-1.건립열민전조-전용기병련모형，분석료빈솔대불동온도하박막전조기조항적영향.재실험온구내，SrTiO3박막적개전상수구유교호적열은정성.
Strontium titanate (SrTiO3) film deposited on a SiO2/Si substrateby the argon ion beam sputtering technique is used to fabricate a thin film resistor by standard integrated circuit technology. Results show that the film resistor has thermal sensitivity characteristics at the temperatures range of 28 ℃ to 150 ℃, the temperature coefficient of the resistor is -2.15%℃-1 at 30 ℃, and the current temperature characteristics exhibit a linear relationship under lower voltage of D.C. supply. The effect of frequency on the impedance of the film resistor at various temperatures are analyzed by constructing a thermistor capacitor component structure model. The dielectric constant of SrTiO3 film has superior thermal stability at the experimental temperatures.