半导体技术
半導體技術
반도체기술
SEMICONDUCTOR TECHNOLOGY
2010年
5期
423-426
,共4页
杨亚丽%陈国鹰%郭丽斌%高慧
楊亞麗%陳國鷹%郭麗斌%高慧
양아려%진국응%곽려빈%고혜
暗特性%伏安特性%砷化镓太阳电池%户外特性
暗特性%伏安特性%砷化鎵太暘電池%戶外特性
암특성%복안특성%신화가태양전지%호외특성
dark I-V%I-V characteristics%GaAs solar cell%outdoor peformance
作为对聚光特性的补偿,对电池进行暗特性测试,从曲线中提取了几个重要的电学特性参数.搭建了一套CPV测试系统,分析了GaAs电池500倍聚光条件下的输出特性,测得模块的峰值效率为22.24%,峰值功率为23.56 W,短路电流温度系数为1.9 mA/℃,开路电压温度系数为-5.9 mV/℃.户外特性测试为光伏发电系统提供可靠性,更多的实验表明,效率和填充因子在一天内的变化趋势相反,最值均在光通量下降为最大值时的90%左右出现.实验表明,Isc(短路电流)和Voc(开路电压)随光照强度的变化与理论分析一致.
作為對聚光特性的補償,對電池進行暗特性測試,從麯線中提取瞭幾箇重要的電學特性參數.搭建瞭一套CPV測試繫統,分析瞭GaAs電池500倍聚光條件下的輸齣特性,測得模塊的峰值效率為22.24%,峰值功率為23.56 W,短路電流溫度繫數為1.9 mA/℃,開路電壓溫度繫數為-5.9 mV/℃.戶外特性測試為光伏髮電繫統提供可靠性,更多的實驗錶明,效率和填充因子在一天內的變化趨勢相反,最值均在光通量下降為最大值時的90%左右齣現.實驗錶明,Isc(短路電流)和Voc(開路電壓)隨光照彊度的變化與理論分析一緻.
작위대취광특성적보상,대전지진행암특성측시,종곡선중제취료궤개중요적전학특성삼수.탑건료일투CPV측시계통,분석료GaAs전지500배취광조건하적수출특성,측득모괴적봉치효솔위22.24%,봉치공솔위23.56 W,단로전류온도계수위1.9 mA/℃,개로전압온도계수위-5.9 mV/℃.호외특성측시위광복발전계통제공가고성,경다적실험표명,효솔화전충인자재일천내적변화추세상반,최치균재광통량하강위최대치시적90%좌우출현.실험표명,Isc(단로전류)화Voc(개로전압)수광조강도적변화여이론분석일치.
Dark I-V test Was tested as compensation for light I-V characteristic.and it provided several important electrical parameters.After a CPV test system was setup,a peak efficiency of 22.24% and a peak power of 23.56 W were achieved in this module designed for a 500 times geometric concentration ratio.The short-current temperature coefficient is 1.9 mA/℃ and the open-voltage temperature coefficient is -5.9 mV/℃.The measurement of outdoor characteristics provides evidence of reliability for solar PV system.The additional experiments suggest that the efficiency and fill factor have the opposite trend in one day.When the irradiance drops to about 90% of its peak value,efficiency has maximum value and fill factor has minimum value.Isc and Voc change with light intensity,which is in consistent with theoretical analysis.