CAJ | 학술논문

在超大规模集成电路的生产中,减少氧化膜CMP中的各种缺陷一直是工程师们的工作焦点之一.实际上这些缺陷的尺寸、形状、深度等能为我们寻找它们的根源提供许多有益的信息.例如:在肉眼下可见的长、直、深的划伤可能与研磨垫修整器有关;只有在先进的检测设备下才可见的轻微、连续的划伤与与研磨剂有关.对常见缺陷进行分类,并提供一些可见的缺陷产生机制,同时也讨论了如何通过日常检测来监视真正产品上的缺陷.
재초대규모집성전로적생산중,감소양화막CMP중적각충결함일직시공정사문적공작초점지일.실제상저사결함적척촌、형상、심도등능위아문심조타문적근원제공허다유익적신식.례여:재육안하가견적장、직、심적화상가능여연마점수정기유관;지유재선진적검측설비하재가견적경미、련속적화상여여연마제유관.대상견결함진행분류,병제공일사가견적결함산생궤제,동시야토론료여하통과일상검측래감시진정산품상적결함.
The various mechanisms of defect generation during oxide CMP is always the focus of CMPengineers who work in a mass-production site for VLSI/ULSI devices. The appearance of defect size,shape, depth and pattern on the product wafers provide information on the source of the defects. Forexample, the long-straight-deep scratches that are visible to human eyes indicate some problems with theconditioner. The chattered marks that only visible under the most advanced inspection tools are usuallyrelated to slurry abrasive or debris on the polishing table. In this paper, we will categorize the mostfrequent types of defectivity post oxide CMP, and provide explanation of the possible mechanisms ofdefect generation. Certain counter-measure was taken to contain the defect density level, and the result isshown on the daily SPC trend charts.