CAJ | 학술논문

在室温条件下,以溴乙烷为单体、氢气为载气,用13.56 MHz射频等离子体化学气相淀积方法(RF-PECVD)在硅片衬底上生长了掺溴非晶碳氢薄膜(a-C:Br:H).通过对其进行Raman光谱分析,研究了工作气压对薄膜结构的影响.结果显示:随着气体工作压力从20 Pa下降至5 Pa,样品D峰强度增强,I_D/I_G值逐步由1.18增加至1.36,G峰的位置向高频轻微移动;与此同时,薄膜生长方式逐步转为低能态形式生长,薄膜中sp~2C逐步由链式结构向环式结构转化.
재실온조건하,이추을완위단체、경기위재기,용13.56 MHz사빈등리자체화학기상정적방법(RF-PECVD)재규편츤저상생장료참추비정탄경박막(a-C:Br:H).통과대기진행Raman광보분석,연구료공작기압대박막결구적영향.결과현시:수착기체공작압력종20 Pa하강지5 Pa,양품D봉강도증강,I_D/I_G치축보유1.18증가지1.36,G봉적위치향고빈경미이동;여차동시,박막생장방식축보전위저능태형식생장,박막중sp~2C축보유련식결구향배식결구전화.
Bromine doped hydrogenated amorphous carbon (a-C : Br : H) thin films were deposited on silicon wafers by rf. -plas-ma enhanced chemical vapor deposition (RF-PECVD) with a frequency of 13.56 MHz at room temperature using pure bromoeth-ane as a precursor of carbon source mixed with hydrogen ( H_2) as a carrier gas. The structures of the films prepared by partial pressure of mixed gas (C_2 H_5 Br/H_2 ) were studied by Raman spectroscopy. The results indicate that the intensity of the Raman D peak is stronger, the Raman G peak positions shift up a little, and the value of I_D/I_G increases from 1.18 to 1.36, if the gas pressure of mixed C_2 H_5 Br/H_2 is reduced gradually from 20 to 5 Pa. Meanwhile, the growth of thin film turns gradually into low energy mode promoting the transform of sp~2-C from chains to rings.