CAJ | 학술논문

研究了以金属有机化学气相沉积方法生长在SiNx掩模层的GaN的应力状态,以及应力对光学性质的影响.通过微区拉曼光谱对应力进行了表征,结果显示,随着SiNx掩模淀积时间的增加,其上生长的GaN应力会相应地,释放.相应地,低温光致发光测试显示,施主束缚激子发光峰峰位出现明显的红移.我们认为,随着SiNx掩模淀积时间的增加,掩模覆盖度的增大,促进了侧向外延的生长,释放了压应力,进而影响了材料的光学性质.
연구료이금속유궤화학기상침적방법생장재SiNx엄모층적GaN적응력상태,이급응력대광학성질적영향.통과미구랍만광보대응력진행료표정,결과현시,수착SiNx엄모정적시간적증가,기상생장적GaN응력회상응지,석방.상응지,저온광치발광측시현시,시주속박격자발광봉봉위출현명현적홍이.아문인위,수착SiNx엄모정적시간적증가,엄모복개도적증대,촉진료측향외연적생장,석방료압응력,진이영향료재료적광학성질.
The stress state and its effect on optical properties of GaN films grown on porous SiNx interlayers by using metal organic chemical vapor deposition (MOCVD)method are investigated. The stress is characterized by the frequency shift based on micro-Raman spectroscopy measurement. It shows that more residual stress in GaN film grown on the SiNx interlayers is relaxed when the time of in situ SiNx deposition is increased. Accordingly, the donor bound extion(DBE) peak shows red shift in low temperature photoluminescence(PL)measurement. We assume that the increasing time of in situ SiNx deposition enlarging the lateral overgrowth area is the main reason to reduce the residual stress and influence corresponding optical properties.