CAJ | 학술논문

利用保偏光纤MZ干涉仪测量了光学各向异性薄膜材料的电光效应.与传统MZ干涉仪相比,该干涉仪中所有的部件都采用保偏光纤进行连接.光源采用一个偏振输出最大功率为10mW的DFB激光器,用以得到高的信噪比.用该激光器测量超晶格材料的电光系数,同时用GaAs,KTP和GaN材料作为对比材料.测量的电光系数和已有结果有较好的可比性.
이용보편광섬MZ간섭의측량료광학각향이성박막재료적전광효응.여전통MZ간섭의상비,해간섭의중소유적부건도채용보편광섬진행련접.광원채용일개편진수출최대공솔위10mW적DFB격광기,용이득도고적신조비.용해격광기측량초정격재료적전광계수,동시용GaAs,KTP화GaN재료작위대비재료.측량적전광계수화이유결과유교호적가비성.
A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer,all the components are connected via polarization-maintaining fibers. At the same time, a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio. Here, we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs, KTP, and GaN as comparative samples. The measured EO coefficients show good comparability with the others.