CAJ | 학술논문

给出了一种600V内透明集电极IGBT(ITC-IGBT)的制造方法,它以传统穿透型IGBT(PT-IGBT)的工艺为基础,但在外延前先进行高剂量氦离子注入及退火,从而在器件集电区近集电结附近引入一个纳米空腔层.该纳米空腔层内载流子寿命很低,在物理上起电极作用,从而使器件集电区由非透明变为内透明.封装后,测试了器件性能,与电子辐照的PT-IGBT相比,ITC-IGBT的零温度点更低,关断时间和导通压降的折中更优,验证了内透明思想的正确性.同时,针对器件结构特点,通过求解输运方程和扩散方程,建市了ITC-IGBT的分析模型,并将实验样管结构参数代入模型.理论计算结果与实验结果符合较好,验证了模型的有效性.
급출료일충600V내투명집전겁IGBT(ITC-IGBT)적제조방법,타이전통천투형IGBT(PT-IGBT)적공예위기출,단재외연전선진행고제량양리자주입급퇴화,종이재기건집전구근집전결부근인입일개납미공강층.해납미공강층내재류자수명흔저,재물리상기전겁작용,종이사기건집전구유비투명변위내투명.봉장후,측시료기건성능,여전자복조적PT-IGBT상비,ITC-IGBT적령온도점경저,관단시간화도통압강적절중경우,험증료내투명사상적정학성.동시,침대기건결구특점,통과구해수운방정화확산방정,건시료ITC-IGBT적분석모형,병장실험양관결구삼수대입모형.이론계산결과여실험결과부합교호,험증료모형적유효성.
A mnufacturing method of 600 V internal transparent collector(ITC)IGBT is presented.It bases on the tradi-tional process of punch.through(Pr)IGBT,but before epitaxial,it needs high-dose helium ion implantation and annealing,then a nano-voids layer is introduced in the collector region near the p-colleetor/n-buffer junction.The carrier lifetime in the nano-voids layer is very low,so the nano-voids layer functions as an electrode,and the collector changes from non-transparent to intemal transparent.After packaging,the device performance is tested.Compared with PT-IGBT with electron irradiation,ITC-IGBT has lower zero temperature point and better trade-off curve between turn-off time and turn-on voltage drop,which validates the validity of the internal transparent idea.At the same time,based on the structure of the device,an analytical model of ITC-IGBT is established by solving the transport equation and diffusion equation.Taking the experi-mental parameters of the sample into the model,the theoretical calculation results fit well with the experimental results,which verify the validity of the model.