半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
3期
260-265
,共6页
赵晖%徐栋麟%潘莎%杨柯%任俊彦%章倩苓
趙暉%徐棟麟%潘莎%楊柯%任俊彥%章倩苓
조휘%서동린%반사%양가%임준언%장천령
电流可调%电荷泵%带隙基准源%低drop-out调压器%电容式直流-直流电压升压器
電流可調%電荷泵%帶隙基準源%低drop-out調壓器%電容式直流-直流電壓升壓器
전류가조%전하빙%대극기준원%저drop-out조압기%전용식직류-직류전압승압기
current-adjustable%charge-pump%bandgap%low drop-out regulator%DC-DC voltage-booster
设计了一种电流可调的CMOS电荷泵电路,其中采用了带隙基准源、低drop-out调压器及电容式直流-直流电压升压器为电荷泵电路提供电源电压,此电压不受外部供电电压及温度变化的影响;同时,电荷泵电路中的参考电流源本身也对温度变化不敏感.电路设计采用0.18μm 1.8V标准的数字CMOS工艺.模拟结果表明电路性能令人满意.
設計瞭一種電流可調的CMOS電荷泵電路,其中採用瞭帶隙基準源、低drop-out調壓器及電容式直流-直流電壓升壓器為電荷泵電路提供電源電壓,此電壓不受外部供電電壓及溫度變化的影響;同時,電荷泵電路中的參攷電流源本身也對溫度變化不敏感.電路設計採用0.18μm 1.8V標準的數字CMOS工藝.模擬結果錶明電路性能令人滿意.
설계료일충전류가조적CMOS전하빙전로,기중채용료대극기준원、저drop-out조압기급전용식직류-직류전압승압기위전하빙전로제공전원전압,차전압불수외부공전전압급온도변화적영향;동시,전하빙전로중적삼고전류원본신야대온도변화불민감.전로설계채용0.18μm 1.8V표준적수자CMOS공예.모의결과표명전로성능령인만의.
A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current reference.This generated voltage is insensitive to the changes of external power supply voltage and temperature,while the current reference itself is insensitive to temperature.The circuit is designed in 0.18μm 1.8V standard digital CMOS process.The simulated results show that the performance of the circuit is satisfied.