CAJ | 학술논문

采用一种新的方法计算双极器件中离子注B硅基区和原位掺B的锗硅基区禁带变窄量．在器件基区的少子迁移率、多子迁移率和方块电阻已知的情况下，应用这种方法只需测量室温和液氮温度下的电学特性就可以获得禁带变窄量．这种方法从双极晶体管的集电极电流公式出发，利用VBE做自变量，在室温和液氮温度下测量器件的Gummel图，选取lnIC随VBE变化最为线性的一部分读出VBE及相应的IC数值，获得两条VBE-lnIC直线，通过求解两条直线的交点可以计算出基区的禁带变窄量ΔEG．利用这种方法测试了硅双极器件和锗硅基区双极器件，其基区禁带变窄量分别为41meV和125meV，这个测量结果与文献中的数值符合较好．
채용일충신적방법계산쌍겁기건중리자주B규기구화원위참B적타규기구금대변착량．재기건기구적소자천이솔、다자천이솔화방괴전조이지적정황하，응용저충방법지수측량실온화액담온도하적전학특성취가이획득금대변착량．저충방법종쌍겁정체관적집전겁전류공식출발，이용VBE주자변량，재실온화액담온도하측량기건적Gummel도，선취lnIC수VBE변화최위선성적일부분독출VBE급상응적IC수치，획득량조VBE-lnIC직선，통과구해량조직선적교점가이계산출기구적금대변착량ΔEG．이용저충방법측시료규쌍겁기건화타규기구쌍겁기건，기기구금대변착량분별위41meV화125meV，저개측량결과여문헌중적수치부합교호．
The apparent bandgap narrowing in bipolar transistors with ion implanted and epitaxial Si0．83Ge0．17 bases is measured using a new method．The bandgap narrowing is only obtained by measuring the electrical characteristics of the bipolar transistor at 300K and 77K under the condition of known μnB,μpB and RB of the transistor．According to the temperature dependence on the collect current IC(T),a graph of lnIC as a function of VBE is plotted based on the data extracted from the linear region of the Gummel plot when the temperature keeping constant．Two lines of lnIC-VBE at the temperature of 300K and 77K，respectively are obtained．At the intersection of two lines，the values of bandgap narrowing in Si and Si0．83Ge0．17 bases to be 41meV and 125meV，respectively，are got by calculation which are in good agreement with the measured ones in the reference．