光子学报
光子學報
광자학보
ACTA PHOTONICA SINICA
2001年
1期
86-89
,共4页
李传南%肖步文%侯晶莹%刘式墉
李傳南%肖步文%侯晶瑩%劉式墉
리전남%초보문%후정형%류식용
有机电致发光器件%LiF/Al电极
有機電緻髮光器件%LiF/Al電極
유궤전치발광기건%LiF/Al전겁
本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m2、14000cd/m2提高到19600cd/m2,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.
本文報道瞭利用LiF/Al作為負電極的有機電緻髮光器件,器件結構為ITO/TPD/Alq3/LiF/Al,LiF層的加入增彊瞭電子註入,噹其厚度為0.4nm時,器件的性能最好,與單層Al和Mg/Al電極的同類器件相比,此時器件的開啟電壓由Al電極時的4.3V和Mg/Al電極時的3.0V降低到瞭2.0V,器件的最大亮度分彆由4000cd/m2、14000cd/m2提高到19600cd/m2,器件的髮光效率也分彆增加瞭5倍和2倍,達到2.66lm/W.
본문보도료이용LiF/Al작위부전겁적유궤전치발광기건,기건결구위ITO/TPD/Alq3/LiF/Al,LiF층적가입증강료전자주입,당기후도위0.4nm시,기건적성능최호,여단층Al화Mg/Al전겁적동류기건상비,차시기건적개계전압유Al전겁시적4.3V화Mg/Al전겁시적3.0V강저도료2.0V,기건적최대량도분별유4000cd/m2、14000cd/m2제고도19600cd/m2,기건적발광효솔야분별증가료5배화2배,체도2.66lm/W.
It is reported the fabrication of organic light-emitting devices(OLEDs) using LiF/Al as cathode.The structure of this devices is ITO/TPD/Alq3/LiF/Al,and the insertion of the ultra-thin LiF layer enhanced the electron injection in this device.As a result,when the thickness of the LiF layer is optimized 0.4nm,the OLEDs′properties show best,its maximum brightness is 19600 cd/m2(17V),while the devices with Al cathode or Mg/Al cathode exihibit only 4000 cd/m2(22V),14000 cd/m2(19V) respectively.And the operating voltage for devices with LiF/Al cathode is lower (2.0V) than those of devices with Al cathode (4.3V) or Mg/Al cathode (3.0V).Its luminescent efficiency is 5 and 2 times than that of devices with Al cathode or Mg/Al cathode.