CAJ | 학술논문

采用等离子增强化学气相法(PECVD)在碲镉汞(MCT)衬底上沉积出纳米团聚的类金刚石薄膜(DLC).用原子力显微镜(AFM )和侧向力显微镜(LFM)对DLC和MCT表面形貌进行表征;用俄歇电子能谱(AES)对DLC/MCT界面附近各元素含量的分布进行分析研究.结果表明:当膜厚达到25nm以上,这种DLC膜就能够有效地抑制MCT中HgTe的分解和Hg与Te的外扩散.AFM 和LFM的观察结果表明,原始MCT晶片经100℃在氮气气氛中退火30min,表面区域出现了不同与MCT的微米量级的新相,而由DLC膜保护的MCT晶片表面就没有观察到这种由分解反应引起的相变.
채용등리자증강화학기상법(PECVD)재제력홍(MCT)츤저상침적출납미단취적류금강석박막(DLC).용원자력현미경(AFM )화측향력현미경(LFM)대DLC화MCT표면형모진행표정;용아헐전자능보(AES)대DLC/MCT계면부근각원소함량적분포진행분석연구.결과표명:당막후체도25nm이상,저충DLC막취능구유효지억제MCT중HgTe적분해화Hg여Te적외확산.AFM 화LFM적관찰결과표명,원시MCT정편경100℃재담기기분중퇴화30min,표면구역출현료불동여MCT적미미량급적신상,이유DLC막보호적MCT정편표면취몰유관찰도저충유분해반응인기적상변.
A dense and homogeneous nanograins diamond-like carbon (DLC) film has been deposited on the well-polished HgCdTe wafer by radio frequency plasma enhanced chemical vapor deposition at room temperature. The surface photographs of both DLC and MCT are studied by AFM and LFM respectively. The interface of DLC/HgCdTe is studied by AES. Result shows that DLC film can suppress the dissociation of the weak bonding HgTe, and prevent Hg escapingfrom from MCT surface to some extent, when the thickness of DLC film has reached 25nm.AFM and LFM results show that the compositions of some MCT surface regions have dissolved and formed another phase different from MCT substrate, after 30 minutes annealing at 100℃. However this change has not been observed on the surface of DLC coated MCT. This result is agreement with that given by AES.