等离子体科学和技术(英文版)
等離子體科學和技術(英文版)
등리자체과학화기술(영문판)
PLASMA SCIENCE & TECHNOLOGY
2003年
2期
1729-1734
,共6页
赵庆勋%张靖%辛红丽%文钦若%杨景发
趙慶勛%張靖%辛紅麗%文欽若%楊景髮
조경훈%장정%신홍려%문흠약%양경발
diamond film%EACVD%Monte Carlo simulation
Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are given. The results indicate that the electron scattering n.ear the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD.
