半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2001年
5期
613-617
,共5页
黄仕华%何景福%陈建才%雷春红
黃仕華%何景福%陳建纔%雷春紅
황사화%하경복%진건재%뢰춘홍
碲镉汞%液相外延生长%开管液相外延系统%CdZnTe衬底
碲鎘汞%液相外延生長%開管液相外延繫統%CdZnTe襯底
제력홍%액상외연생장%개관액상외연계통%CdZnTe츤저
设计了一种使用良好的石墨舟,建立了一套能进行开管液相外延的系统,并利用此系统在CdZnTe衬底上和在富Te的生长条件下生长了不同x值的HgCdTe外延薄膜.通过对外延生长工艺的控制,外延薄膜的表面形貌有很大的改善,残留母液大为减少,外延薄膜的组分比较均匀,其电学性能得到较大改善,HgCdTe外延薄膜与CdZnTe衬底之间的互扩散非常少,外延膜的晶体结构也较完整.
設計瞭一種使用良好的石墨舟,建立瞭一套能進行開管液相外延的繫統,併利用此繫統在CdZnTe襯底上和在富Te的生長條件下生長瞭不同x值的HgCdTe外延薄膜.通過對外延生長工藝的控製,外延薄膜的錶麵形貌有很大的改善,殘留母液大為減少,外延薄膜的組分比較均勻,其電學性能得到較大改善,HgCdTe外延薄膜與CdZnTe襯底之間的互擴散非常少,外延膜的晶體結構也較完整.
설계료일충사용량호적석묵주,건립료일투능진행개관액상외연적계통,병이용차계통재CdZnTe츤저상화재부Te적생장조건하생장료불동x치적HgCdTe외연박막.통과대외연생장공예적공제,외연박막적표면형모유흔대적개선,잔류모액대위감소,외연박막적조분비교균균,기전학성능득도교대개선,HgCdTe외연박막여CdZnTe츤저지간적호확산비상소,외연막적정체결구야교완정.
A novel graphite boat has been designed and an open-tube system for LPE growth with a mercury source been set up.With hydrogen as carrying gas,the mercury steam from a heating mercury source would compensate that volatilized from the growth liquid.Epitaxial films of HgCdTe with various values of x have been grown in Te-rich solution and on CdZnTe substrates using this system.By controlling the growth procedure,the morphology of HgCdTe epitaxial films is observed improved obviously,and remained melt on the surface of films has been reduced greatly.The constituent of epitaxial films is rather homogeneous with electrical characteristic improved obviously.The inter-diffusion between MCT epitaxial films and CdZnTe substrates is very little,and the crystal structure of MCT epitaxial films is perfect.