人工晶体学报
人工晶體學報
인공정체학보
2011年
3期
700-703,709
,共5页
纳米结构%半导体%缺陷
納米結構%半導體%缺陷
납미결구%반도체%결함
nanostructures%semiconductors%defects
用热蒸发的方法合成了铟掺杂的ZnGa2O4纳米线.利用透射电镜和X射线能谱对样品的结构和成分进行了研究.在"之"字形和竹节形两种形貌的纳米线中分别发现了孪晶和面位错两种缺陷."之"字形生长的纳米折线是孪晶,沿<111>方向生长,孪晶角为140°.竹节形的纳米线沿<011>方向生长,竹节处存在两种面位错,面位错与生长方向分别成54°和90°角.缺陷的存在对纳米线的性质将产生重要影响.
用熱蒸髮的方法閤成瞭銦摻雜的ZnGa2O4納米線.利用透射電鏡和X射線能譜對樣品的結構和成分進行瞭研究.在"之"字形和竹節形兩種形貌的納米線中分彆髮現瞭孿晶和麵位錯兩種缺陷."之"字形生長的納米摺線是孿晶,沿<111>方嚮生長,孿晶角為140°.竹節形的納米線沿<011>方嚮生長,竹節處存在兩種麵位錯,麵位錯與生長方嚮分彆成54°和90°角.缺陷的存在對納米線的性質將產生重要影響.
용열증발적방법합성료인참잡적ZnGa2O4납미선.이용투사전경화X사선능보대양품적결구화성분진행료연구.재"지"자형화죽절형량충형모적납미선중분별발현료련정화면위착량충결함."지"자형생장적납미절선시련정,연<111>방향생장,련정각위140°.죽절형적납미선연<011>방향생장,죽절처존재량충면위착,면위착여생장방향분별성54°화90°각.결함적존재대납미선적성질장산생중요영향.
In-doped ZnGa2O4 nanowires were synthesized by a thermal evaporation method. Transmission electron microscopy and energy-dispersive X-ray spectroscopy were used to study the structures and components of the product. Twinning and planar dislocations were observed in zigzag and bamboo-like nanowires. The zigzag nanowires are [111] twinning. They grow along the < 111 > direction. Thetwinning angle is 140° . Nanowires with bamboo-like joints grow along the < 011 > direction. Two kinds of planar dislocations are observed in them. The dislocations have an angle about 54° and 90° to the growth direction, respectively. The defects should be important to the properties of the nanostructures.
