CAJ | 학술논문

设计并使用分子束外延(MBE)方法制备了不同帽层厚度、不同掺杂浓度的双平面掺杂GaAs PHEMT外延材料,采用不同工艺手段控制InGaAs沟道异质结界面的平滑程度.采用非接触霍尔方法对样品二维电子气(2DEG)浓度及迁移率进行测试,并用范得堡法对实验结果加以验证.结果表明,平整异质结界面生长技术能有效控制高迁移率2DEG浓度分布;与范德堡法相比,非接触霍尔方法无破坏性、测试结果可靠,该结果可以用来分析多层结构的PHEMT外延材料中InGaAs沟道界面的生长情况.
설계병사용분자속외연(MBE)방법제비료불동모층후도、불동참잡농도적쌍평면참잡GaAs PHEMT외연재료,채용불동공예수단공제InGaAs구도이질결계면적평활정도.채용비접촉곽이방법대양품이유전자기(2DEG)농도급천이솔진행측시,병용범득보법대실험결과가이험증.결과표명,평정이질결계면생장기술능유효공제고천이솔2DEG농도분포;여범덕보법상비,비접촉곽이방법무파배성、측시결과가고,해결과가이용래분석다층결구적PHEMT외연재료중InGaAs구도계면적생장정황.
Double-delta doped GaAs pseudomorphic high electron mobility transistor (PHEMT) materials with different doping concentrations and cap layer thicknesses were designed and fabricated by molecular beam epitaxy (MBE). The smoothness of heterostructure interface was controlled by special technology. Contactless-Hall test was applied to get sheet density and mobility of 2DEG, and van der Panw Hall test was used as a validation of experimental results. The results indicate that the distribution of 2DEG can be controlled by the technology of smoothing heterostructure interface. Compared with van der Pauw Hall test, contactless-Hall test is non-destructive and reliable. This test method can be used to analyze the growth of InGaAs channel interface in multi-layer PHEMT epitaxial material.