人工晶体学报
人工晶體學報
인공정체학보
2009年
5期
1083-1087
,共5页
冯健%徐闰%汤敏燕%张旭%乐永康%王林军
馮健%徐閏%湯敏燕%張旭%樂永康%王林軍
풍건%서윤%탕민연%장욱%악영강%왕림군
BN薄膜%金刚石薄膜%射频磁控溅射
BN薄膜%金剛石薄膜%射頻磁控濺射
BN박막%금강석박막%사빈자공천사
BN thin film%diamond film%radio frequency magnetron sputtering
采用射频磁控溅射技术分别在纳米与微米金刚石薄膜上制备立方氮化硼(c- BN)薄膜.金刚石薄膜由拉曼光谱(Raman)及原子力显微镜(AFM)进行表征.采用傅立叶变换红外光谱(FTIR)研究了不同沉积温度对c- BN薄膜生长的影响,结果表明在金刚石薄膜上生长c- BN不存在温度阈值,室温下生长的c- BN含量可达70%以上.当沉积温度由室温向上升高时,对于纳米金刚石薄膜衬底上生长的BN薄膜而言,其中的立方相含量反而逐渐降低.此外,随着沉积温度的降低,c- BN对应的峰位向低波数方向偏移的现象表明低温下生长的c- BN薄膜内应力较小.文中探讨了产生此现象的原因.
採用射頻磁控濺射技術分彆在納米與微米金剛石薄膜上製備立方氮化硼(c- BN)薄膜.金剛石薄膜由拉曼光譜(Raman)及原子力顯微鏡(AFM)進行錶徵.採用傅立葉變換紅外光譜(FTIR)研究瞭不同沉積溫度對c- BN薄膜生長的影響,結果錶明在金剛石薄膜上生長c- BN不存在溫度閾值,室溫下生長的c- BN含量可達70%以上.噹沉積溫度由室溫嚮上升高時,對于納米金剛石薄膜襯底上生長的BN薄膜而言,其中的立方相含量反而逐漸降低.此外,隨著沉積溫度的降低,c- BN對應的峰位嚮低波數方嚮偏移的現象錶明低溫下生長的c- BN薄膜內應力較小.文中探討瞭產生此現象的原因.
채용사빈자공천사기술분별재납미여미미금강석박막상제비립방담화붕(c- BN)박막.금강석박막유랍만광보(Raman)급원자력현미경(AFM)진행표정.채용부립협변환홍외광보(FTIR)연구료불동침적온도대c- BN박막생장적영향,결과표명재금강석박막상생장c- BN불존재온도역치,실온하생장적c- BN함량가체70%이상.당침적온도유실온향상승고시,대우납미금강석박막츤저상생장적BN박막이언,기중적립방상함량반이축점강저.차외,수착침적온도적강저,c- BN대응적봉위향저파수방향편이적현상표명저온하생장적c- BN박막내응력교소.문중탐토료산생차현상적원인.
The c-BN films were prepared by radio frequency magnetron sputtering on the nanocrystalline and microcrystalline diamond films.Diamond films were characterized by Raman spectroscopy and atomic force microscopy.Fourier transform infrared spectroscopy (FTIR) was adopted to characterize the effect of different deposition temperatures on the growth of BN films. Experimental results show that there isn't threshold temperature occurs on the deposition of c-BN, and the content of cubic phase in the BN films prepared at room temperature could be more than 70%. When the nanocrystalline diamond films are used as substrates, the content of cubic phase in the BN films will decrease as the temperature increasing. Furthermore, the FTIR peak corresponding to c-BN shifts to a lower wavenumber with decreasing the growth temperature, indicating that less stress appears in the c-BN films at a lower growth temperature.The reason caused this phenomenon was dissused in this paper.